Ontology highlight
ABSTRACT:
SUBMITTER: Ansari A
PROVIDER: S-EPMC5455440 | biostudies-literature | 2015 Mar
REPOSITORIES: biostudies-literature
Materials (Basel, Switzerland) 20150317 3
This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleati ...[more]