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Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities.

ABSTRACT: Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)₈]Eu[Pc(ONh)₈] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm² V^-1 s^-1 for holes and electrons, respectively, under ambient conditions.

SUBMITTER: Kong X

PROVIDER: S-EPMC5495994 | biostudies-literature | 2015 Mar

REPOSITORIES: biostudies-literature

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Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities.

Kong Xia X Zhang Xia X Gao Dameng D Qi Dongdong D Chen Yanli Y Jiang Jianzhuang J

Chemical science 20141210 3

Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)8]Eu[Pc(ONh)8] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm2 V-1 s-1 for holes and electrons, respectively, under ambient conditions. ...[more]

PMID: 28706646

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