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Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities.

ABSTRACT: Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)₈]Eu[Pc(ONh)₈] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm² V^-1 s^-1 for holes and electrons, respectively, under ambient conditions.

SUBMITTER: Kong X

PROVIDER: S-EPMC5495994 | biostudies-literature |

REPOSITORIES: biostudies-literature

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A nonchlorinated solvent-processed polymer semiconductor for high-performance ambipolar transistors.

Project description:Ambipolar polymer semiconductors are potentially serviceable for logic circuits, light-emitting field-effect transistors (LFETs) and polymer solar cells (PSCs). Although several high-performance ambipolar polymers have been developed, their optoelectronic devices are generally processed from toxic chlorinated solvents. To achieve the commercial applications of organic FETs (OFETs), the polymers should be processed from nonchlorinated solvents, instead of chlorinated solvents. However, most conjugated polymers show poor solubility in nonchlorinated solvents. It is of great importance to develop ambipolar polymers that can be processed from nonchlorinated solvents. Here, we develop a nonchlorinated solvent processed polymer named poly[7-fluoro-N, N'-di(4-decyltetradecyl)-7'-azaisoindigo-6',6″-(thieno[3,2-b]thiophene-2,5-diyl)-7‴-fluoro-N″, N‴-di(4-decyltetradecyl)-7″-azaisoindigo-6,6‴-([2,2″-bithiophene]-5,5″-diyl)] (PITTI-BT) by designing a monomer with a large molar mass. The polymer displays good solubility in p-xylene (PX). Well-aligned films of PITTI-BT are achieved by an off-center spin-coating (SC) method. Based on the high-quality films, the OFETs fabricated from PX solution achieve record ambipolar performance with hole and electron mobilities of 3.06 and 2.81 cm2 V-1 s-1, respectively. The combination of nonchlorinated solvents and good alignment process offers an effective and eco-friendly approach to obtain high-performance ambipolar transistors.

| S-EPMC9031015 | biostudies-literature

Ambipolar Charge Storage in Type-I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor-Based Memories.

Project description:Efficient charge storage media play a pivotal role in transistor-based memories and thus are under intense research. In this work, the charge storage ability of type-I InP/ZnS core/shell quantum dots is well revealed through studying a pentacene-based organic transistor with the quantum dots (QDs) integrated. The quantum well-like energy band structure enables the QDs to directly confine either holes or electrons in the core, signifying a dielectric layer-free nonvolatile memory. Especially, the QDs in this device can be charged by electrons using light illumination as the exclusive method. The electron charging process is ascribed to the photoexcitation process in the InP-core and the hot holes induced. The QDs layer demonstrates an electron storage density of ≈5.0 × 1011 cm-2 and a hole storage density of ≈6.4 × 1011 cm-2 . Resultingly, the output device shows a fast response speed to gate voltage (10 µs), large memory window (42 V), good retention (>4.0 × 104 s), and reliable endurance. This work suggests that the core/shell quantum dot as a kind of charge storage medium is of great promise for optoelectronic memories.

| S-EPMC8373160 | biostudies-literature

Ambipolar solution-processed hybrid perovskite phototransistors.

Project description:Organolead halide perovskites have attracted substantial attention because of their excellent physical properties, which enable them to serve as the active material in emerging hybrid solid-state solar cells. Here we investigate the phototransistors based on hybrid perovskite films and provide direct evidence for their superior carrier transport property with ambipolar characteristics. The field-effect mobilities for triiodide perovskites at room temperature are measured as 0.18 (0.17) cm(2) V(-1) s(-1) for holes (electrons), which increase to 1.24 (1.01) cm(2) V(-1) s(-1) for mixed-halide perovskites. The photoresponsivity of our hybrid perovskite devices reaches 320 A W(-1), which is among the largest values reported for phototransistors. Importantly, the phototransistors exhibit an ultrafast photoresponse speed of less than 10 μs. The solution-based process and excellent device performance strongly underscore hybrid perovskites as promising material candidates for photoelectronic applications.

| S-EPMC4569843 | biostudies-literature

Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics

Project description:Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. We present an asymmetric 2D heterostructure integrating MoTe2, h-BN, and CuInP2S6 as a ferroelectric transistor, which exhibits an unusual property of anti-ambipolar transport characteristic under both positive and negative drain biases. Our results demonstrate that the anti-ambipolar behavior can be modulated by external electric field, achieving a peak-to-valley ratio up to 103. We also provide a comprehensive explanation for the occurrence and modulation of the anti-ambipolar peak based on a model describing linked lateral-and-vertical charge behaviors. Our findings provide insights for designing and constructing anti-ambipolar transistors and other 2D devices with significant potential for future applications. Supplementary Information The online version contains supplementary material available at 10.1186/s11671-023-03860-2.

| S-EPMC10244305 | biostudies-literature

Carrier Dynamics in Solution-Processed CuI as a P-Type Semiconductor: The Origin of Negative Photoconductivity.

Project description:There is an urgent need for efficient solution-processable p-type semiconductors. Copper(I) iodide (CuI) has attracted attention as a potential candidate due to its good electrical properties and ease of preparation. However, its carrier dynamics still need to be better understood. Carrier dynamics after bandgap excitation yielded a convoluted signal of free carriers (positive signal) and a negative feature, which was also present when the material was excited with sub-bandgap excitation energies. This previously unseen feature was found to be dependent on measurement temperature and attributed to negative photoconductivity. The unexpected signal relates to the formation of polarons or strongly bound excitons. The possibility of coupling CuI to plasmonic sensitizers is also tested, yielding positive results. The outcomes mentioned above could have profound implications regarding the applicability of CuI in photocatalytic and photovoltaic systems and could also open a whole new range of possible applications.

| S-EPMC9900634 | biostudies-literature

Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors.

Project description:The development of van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type and associated conductivity with nanometer spatial resolution. Here, we demonstrate the general capability of near-field scanning microwave microscopy (SMM) to image and study the local carrier type and associated conductivity in operando by studying ambiploar field-effect transistors (FETs) of the 1D vdW material tellurium in 2D form. To quantitatively understand electronic variations across the device, we produce nanometer-resolved maps of the local carrier equivalence backgate voltage. We show that the global device conductivity minimum determined from transport measurements does not arise from uniform carrier neutrality but rather from the continued coexistence of p-type regions at the device edge and n-type regions in the interior of our micrometer-scale devices. This work both underscores and addresses the need to image and understand spatial variations in the electronic properties of nanoscale devices.

| S-EPMC7259612 | biostudies-literature

Tris(thio-cyanato-?N)tris-(triphenyl-phosphine oxide-?O)europium(III)-(nitrato-?(2) O,O')bis-(thio-cyanato-?N)tris-(triphenyl-phosphine oxide-?O)europium(III) (1/1).

Project description:The title co-crystal, [Eu(NCS)3(C18H15OP)3][Eu(NCS)2(NO3)(C18H15OP)3], contains two distinct neutral complexes. Each complex has threefold symmetry about its central Eu(3+) ion. As a result, the nitrate-containing mol-ecule contains disorder of its bidentate nitrate and two N-bound thio-cyanate anions, while the [Eu(NCS)3(OPPh3)3] complex is fully ordered. There is a weak ?-? stacking inter-action between the phenyl rings of the two mol-ecules [centroid-centroid distance = 4.138?(4)?Å].

| S-EPMC3588774 | biostudies-literature

Ambipolar inverters based on cofacial vertical organic electrochemical transistor pairs for biosignal amplification.

Project description:[Figure: see text].

| S-EPMC8442873 | biostudies-literature

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis.

Project description:The channel conduction in 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (Eeff) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be Eeff-1.8 and Eeff-2.4, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of Eeff in controlling the value of channel mobility in 4H-SiC MOSFETs.

| S-EPMC9571812 | biostudies-literature

Solution-Processed OLED Based on a Mixed-Ligand Europium Complex.

Project description:An approach to increase the efficiency of europium-based OLEDs was proposed through the formation of a mixed-ligand complex. The design of a series of europium complexes, together with an optimization of the solution deposition, including the host selection, as well as the variation of the solvent and deposition parameters, resulted in a noticeable increase in OLED luminance. As a result, the maximum luminance of the Eu-based OLED reached up to 700 cd/m2, which is one of the highest values for an Eu-based solution-processed OLED. Finally, its stability was investigated.

| S-EPMC9917707 | biostudies-literature

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