Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

High-quality AlN grown with a single substrate temperature below 1200 °C.

ABSTRACT: 1.5-?m AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180?°C, exhibits atomically flat surface and the XRD (102) peak width of 427?arcsec. The results are achieved with a pulsed NH3-flow condition, serving as an alternative for the commonly used temperature-varied buffer structure, which is often complicated and time-consuming. Inserting two pulsed-NH3-flow AlN layers in the epitaxial structure not only releases the lattice strain via the formation of three-dimensional nano-islands, but also smoothens the surface with prolonged lateral migration of Al adatoms. This effective growth technique substantially simplifies the manufacture of device-quality AlN.

SUBMITTER: Huang CP

PROVIDER: S-EPMC5541044 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

High-quality AlN grown with a single substrate temperature below 1200 °C.

Huang Chun-Pin CP Gupta Kapil K Wang Chao-Hung CH Liu Chuan-Pu CP Lai Kun-Yu KY

Scientific reports 20170802 1

1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH<sub>3</sub>-flow condition, serving as an alternative for the commonly used temperature-varied buffer structure, which is often complicated and time-consuming. Inserting two pulsed-NH<sub>3</sub>-flow AlN layers in the epitaxial structure not only releases the lat ...[more]

PMID: 28769071

Similar Datasets

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.

Project description:We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer.

| S-EPMC5503403 | biostudies-other

High-Quality GaSe Single Crystal Grown by the Bridgman Method.

Project description:A high-quality GaSe single crystal was grown by the Bridgman method. The X-ray rocking curve for the studied GaSe sample is symmetric and the Full Width at Half Maximum (FWHM) is only 46 arcs, which is the smallest value ever reported for GaSe crystals. The IR-transmittance is about 66% in the range from 500 to 4000 cm-1. The photoluminescence spectrum at 9.2 K shows a symmetric and sharp excition peak in 2.1046 eV. The results indicate that the as-grown GaSe crystal is of high crystalline quality. The as-grown ε -GaSe crystal has a p-type conductance with the resistivity of 10³ Ω/cm, and the Hall mobility is ~25 cm² V-1 s-1. Few-layer GaSe crystals were prepared through mechanical exfoliation from this high-quality crystal sample. Few-layer GaSe-based photodetectors were fabricated, which exhibit an on/off ratio of 10⁴, a field-effect differential mobility of 0.4 cm² V-1 s-1, and have a fast response time less than 60 ms under light illumination.

| S-EPMC5848883 | biostudies-literature

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

Project description:High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a nanometer-scale-thick AlN nucleation layer (NL). Three kinds of nanometer-scale-thick AlN NLs, including in situ low-temperature AlN (LT-AlN) NL, oxygen-undoped ex situ sputtered AlN NL, and oxygen-doped ex situ sputtered AlN NL, were prepared for epitaxial growth of AlN films on sapphire substrates. The influence of nanoscale AlN NL thickness on the optical transmittance, strain state, surface morphology, and threading dislocation (TD) density of the grown AlN film on sapphire substrate were carefully investigated. The average optical transmittance of AlN film on sapphire substrate with oxygen-doped sputtered AlN NL was higher than that of AlN films on sapphire substrates with LT-AlN NL and oxygen-undoped sputtered AlN NL in the 200-270 nm wavelength region. However, the AlN film on sapphire substrate with oxygen-undoped sputtered AlN NL had the lowest TD density among AlN films on sapphire substrates. The AlN film on sapphire substrate with the optimum thickness of sputtered AlN NL showed weak tensile stress, a crack-free surface, and low TD density. Furthermore, a 270-nm AlGaN-based DUV LED was grown on the high-quality and crack-free AlN film. We believe that our results offer a promising and practical route for obtaining high-quality and crack-free AlN film for DUV LED.

| S-EPMC6915436 | biostudies-literature

Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN.

Project description:In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology was studied as a function of AlN thickness and the annealing duration and temperature. Optimum annealing conditions were identified. The results of X-ray diffraction showed that optimization of the annealing recipe led to a significant reduction in the symmetric (0 0 0 2) and skew symmetric (1 0 -1 1) reflections, which was associated with a reduction in edge and mixed threading dislocation densities (TDDs). Furthermore, the impact on the crystalline structure of AlN and its surface was studied, and the results showed a transition from a surface with high roughness to a smoother surface morphology with a significant reduction in roughness. In addition, the annealing duration was increased at 1650 °C to further understand the impact on both AlN and h-BN, and the results showed a diffusion interplay between AlN and h-BN. Finally, an AlN layer was regrown on the top of an annealed template, which led to large terraces with atomic steps and low roughness.

| S-EPMC9736891 | biostudies-literature

How does temperature impact the conformation of single DNA molecules below melting temperature?

Project description:The double stranded DNA molecule undergoes drastic structural changes during biological processes such as transcription during which it opens locally under the action of RNA polymerases. Local spontaneous denaturation could contribute to this mechanism by promoting it. Supporting this idea, different biophysical studies have found an unexpected increase in the flexibility of DNA molecules with various sequences as a function of the temperature, which would be consistent with the formation of a growing number of locally denatured sequences. Here, we take advantage of our capacity to detect subtle changes occurring on DNA by using high throughput tethered particle motion to question the existence of bubbles in double stranded DNA under physiological salt conditions through their conformational impact on DNA molecules ranging from several hundreds to thousands of base pairs. Our results strikingly differ from previously published ones, as we do not detect any unexpected change in DNA flexibility below melting temperature. Instead, we measure a bending modulus that remains stable with temperature as expected for intact double stranded DNA.

| S-EPMC5829751 | biostudies-literature

Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors.

Project description:In order to develop a film electrode for the surface acoustic wave (SAW) devices working in high temperature, harsh environments, novel AlN/Pt/ZnO multilayers were prepared using pulsed laser deposition (PLD) systems on langasite (LGS) substrates. The AlN film was used as a protective layer and the ZnO buffer layer was introduced to improve the crystal quality of Pt films. The results show that the resistances of Pt and AlN/Pt film electrodes violently increase above 600 °C and 800 °C, respectively, while the resistances of AlN/Pt/ZnO electrodes have more stable electrical resistance from room temperature to 1000 °C. The AlN/Pt/ZnO electrode, where the ZnO film was deposited at 600 °C, has the best temperature stability and can steadily work for 4 h at 1000 °C. The mechanism underlying the stable resistance of the AlN/Pt/ZnO electrode at a high temperature was investigated by analyzing the microstructure of the prepared samples. The proposed AlN/Pt/ZnO film electrode has great potential for applications in high temperature SAW sensors.

| S-EPMC5344621 | biostudies-other

Observation of stimulated emission from a single Fe-doped AlN triangular fiber at room temperature.

Project description:Aluminum nitride (AlN) is a well known wide-band gap semiconductor that has been widely used in fabricating various ultraviolet photo-electronic devices. Herein, we demonstrate that a fiber laser can be achieved in Fe-doped AlN fiber where Fe is the active ion and AlN fiber is used as the gain medium. Fe-doped single crystal AlN fibers with a diameter of 20-50 μm and a length of 0.5-1 mm were preparated successfully. Stimulated emission (peak at about 607 nm and FWHM ~0.2 nm) and a long luminescence lifetime (2.5 ms) were observed in the fibers by a 532 nm laser excitation at room temperature. The high quality long AlN fibers are also found to be good optical waveguides. This kind of fiber lasers may possess potential advantages over traditional fiber lasers in enhancing power output and extending laser wavelengths from infrared to visible regime.

| S-EPMC4673607 | biostudies-literature

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.

Project description:Here we demonstrate high-brightness InGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AlN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19?nm)/sapphire template, green LEDs on sputtered AlN (19?nm)/template has better crystal quality while larger in-plane compressive strain. As a result, the external quantum efficiency (EQE) of green LEDs on sputtered AlN (19?nm)/sapphire template is lower than that of green LEDs on LT-GaN (19?nm)/sapphire template due to strain-induced quantum-confined Stark effect (QCSE). We show that the in-plane compressive strain of green LEDs on sputtered AlN/sapphire templates can be manipulated by changing thickness of the sputtered AlN NL. As the thickness of sputtered AlN NL changes from 19?nm to 40?nm, the green LED on sputtered AlN (33?nm)/sapphire template exhibits the lowest in-plane compressive stress and the highest EQE. At 20?A/cm2, the EQE of 526?nm green LEDs on sputtered AlN (33?nm)/sapphire template is 36.4%, about 6.1% larger than that of the green LED on LT-GaN (19?nm)/sapphire template. Our experimental data suggest that high-efficiency green LEDs can be realized by growing InGaN/GaN multiple quantum wells (MQWs) on sputtered AlN/sapphire template with reduced in-plane compressive strain and improved crystal quality.

| S-EPMC6401382 | biostudies-literature

Genotypic Variability on Grain Yield and Grain Nutritional Quality Characteristics of Wheat Grown under Elevated CO2 and High Temperature.

Project description:The progressive rise in atmospheric CO2 concentrations and temperature associated with climate change is predicted to have a major impact on the productivity and quality of food crops. Therefore, food security is highly dependent on climate change. Following a survey with 60 bread wheat genotypes, here we investigated the genetic variation in grain yield and nutritional quality among 10 of these genotypes grown under elevated CO2 and temperature. With this purpose, the biomass production, grain yield-related traits, the grain concentration of starch, total protein, phenolic compounds, and mineral nutrients, together with the total antioxidant capacity, were determined. Variation among genotypes was found for almost all the studied traits. Higher grain and ear numbers were associated with increased grain yield but decreased grain total protein concentration and minerals such as Cu, Fe, Mg, Na, P, and Zn. Mineral nutrients were mainly associated with wheat biomass, whereas protein concentration was affected by plant biomass and yield-related traits. Associations among different nutrients and promising nutrient concentrations in some wheat genotypes were also found. This study demonstrates that the exploration of genetic diversity is a powerful approach, not only for selecting genotypes with improved quality, but also for dissecting the effect of the environment on grain yield and nutritional composition.

| S-EPMC8224326 | biostudies-literature

Room-temperature liquid diffused separation induced crystallization for high-quality perovskite single crystals.

Project description:Large single crystals serve as an ideal platform for investigating intrinsic material properties and optoelectronic applications. Here we develop a method, namely, room-temperature liquid diffused separation induced crystallization that uses silicone oil to separate the solvent from the perovskite precursors, to grow high-quality perovskite single crystals. The growth kinetics of perovskite single crystals using this method is elucidated, and their structural and optoelectronic properties are carefully characterized. The resultant perovskite single crystals, taking CH3NH3PbBr3 as an example, exhibit approximately 1 µs lifetime, a low trap density of 4.4 × 109 cm-3, and high yield of 92%, which are appealing for visible light or X-ray detection. We hope our findings will be of great significance for the continued advancement of high-quality perovskite single crystals, through a better understanding of growth mechanisms and their deployment in various optoelectronics. The diffused separation induced crystallization strategy presents a major step forward for advancing the field on perovskite single crystals.

| S-EPMC7055282 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data