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High-quality AlN grown with a single substrate temperature below 1200 °C.

ABSTRACT: 1.5-?m AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180?°C, exhibits atomically flat surface and the XRD (102) peak width of 427?arcsec. The results are achieved with a pulsed NH3-flow condition, serving as an alternative for the commonly used temperature-varied buffer structure, which is often complicated and time-consuming. Inserting two pulsed-NH3-flow AlN layers in the epitaxial structure not only releases the lattice strain via the formation of three-dimensional nano-islands, but also smoothens the surface with prolonged lateral migration of Al adatoms. This effective growth technique substantially simplifies the manufacture of device-quality AlN.

SUBMITTER: Huang CP

PROVIDER: S-EPMC5541044 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature

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High-quality AlN grown with a single substrate temperature below 1200 °C.

Huang Chun-Pin CP Gupta Kapil K Wang Chao-Hung CH Liu Chuan-Pu CP Lai Kun-Yu KY

Scientific reports 20170802 1

1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH<sub>3</sub>-flow condition, serving as an alternative for the commonly used temperature-varied buffer structure, which is often complicated and time-consuming. Inserting two pulsed-NH<sub>3</sub>-flow AlN layers in the epitaxial structure not only releases the lat ...[more]

PMID: 28769071

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