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Graphene as a functional layer for semiconducting carbon nanotube transistor sensors.

ABSTRACT: Single-walled carbon nanotubes (SWCNTs) hold vast potential for future electronic devices due to their outstanding properties, however covalent functionalization often destroys the intrinsic properties of SWCNTs, thus limiting their full potential. Here, we demonstrate the fabrication of a functionalized graphene/semiconducting SWCNT (T@fG) heterostructured thin film transistor as a chemical sensor. In this structural configuration, graphene acts as an atom-thick, impermeable layer that can be covalently functionalized via facile diazonium chemistry to afford a high density of surface functional groups while protecting the underlying SWCNT network from chemical modification, even during a covalent chemical reaction. As a result, the highly functionalized carbon-based hybrid structure exhibits excellent transistor properties with a carrier mobility and ON/OFF ratio as high as 64 cm2/Vs and 5400, respectively. To demonstrate its use in potential applications, T@fG thin films were fabricated as aqueous ammonium sensors exhibiting a detection limit of 0.25 ?M in a millimolar ionic strength solution, which is comparable with state-of-the-art aqueous ammonium nanosensors.

SUBMITTER: Peng Z

PROVIDER: S-EPMC5754036 | biostudies-literature | 2017 Dec

REPOSITORIES: biostudies-literature

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Project description:Semiconducting single-walled carbon nanotubes (s-SWCNTs) are considered as a replacement for silicon in field-effect transistors (FETs), solar cells, logic circuits, and so forth, because of their outstanding electronic, optical, and mechanical properties. Herein, we have studied the reaction of pristine SWCNTs dispersed in a pluronic F-68 (PF-68) polymer solution with para-amino diphenylamine diazonium sulfate (PADDS) to separate nanotubes based on their metallicity. The preferential selectivity of the reactions was monitored by changes in the semiconducting (S22 and S33) and metallic (M11) bands by ultraviolet-visible-near infrared spectroscopy. Metallic selectivity depended on the concentrations of PADDS, reaction time, and the solution pH. Furthermore, separation of pure s-SWCNTs was confirmed by Raman spectroscopy and Fourier-transform infrared spectroscopy. After the removal of metallic SWCNTs, direct current electric field was applied to the pure s-SWCNT solution, which effectively directed the nanotubes to align in one direction as nanotube arrays with a longer length and high density. After that, electrically aligned s-SWCNT solution was cast on a silicon substrate, and the length of the nanotube arrays was measured as ∼2 to ∼14 μm with an areal density of ∼2 to ∼20 tubes/μm of s-SWCNTs. Next, electrically aligned s-SWCNT arrays were deposited on the channel of the FET device by drop-casting. Field-emission scanning electron microscopy and electrical measurements have been carried out to test the performance of the aligned s-SWCNTs/FETs. The fabricated FETs with a channel length of 10 μm showed stable electrical properties with a field-effect mobility of 30.4 cm2/Vs and a log10 (I on/I off) current ratio of 3.96. We envisage that this new chemical-based separation method and electric field-assisted alignment could be useful to obtain a high-purity and aligned s-SWCNT array network for the fabrication of high-performance FETs to use in digital and analog electronics.

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Graphene as a functional layer for semiconducting carbon nanotube transistor sensors.

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