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Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

ABSTRACT: Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8?nm MoO_x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO_x interlayer. The self-formed MoO_x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

SUBMITTER: Liu X

PROVIDER: S-EPMC5841428 | biostudies-literature | 2018 Mar

REPOSITORIES: biostudies-literature

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Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

Liu Xianzhe X Xu Hua H Ning Honglong H Lu Kuankuan K Zhang Hongke H Zhang Xiaochen X Yao Rihui R Fang Zhiqiang Z Lu Xubing X Peng Junbiao J

Scientific reports 20180307 1

Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoOx interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoOx interlayer. The self-formed MoOx interlayer acting as an efficient interface modification layer could conduce to ...[more]

PMID: 29515163

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