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Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP.

ABSTRACT: The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 ?m, 1.0 ?m and 1.5 ?m. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (? and ? respectively), have been determined over an electric-field range from 220-1250?kV/cm for ? and from 360-1250?kV/cm for ? for the first time. The ?/? ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.

SUBMITTER: Yi X

PROVIDER: S-EPMC6002549 | biostudies-literature | 2018 Jun

REPOSITORIES: biostudies-literature

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Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP.

Yi Xin X Xie Shiyu S Liang Baolai B Lim Leh Woon LW Zhou Xinxin X Debnath Mukul C MC Huffaker Diana L DL Tan Chee Hing CH David John P R JPR

Scientific reports 20180614 1

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β ...[more]

PMID: 29904062

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