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Chemical Vapor Deposition Growth of Two-Dimensional Monolayer Gallium Sulfide Crystals Using Hydrogen Reduction of Ga2S3.


ABSTRACT: Two-dimensional gallium sulfide (GaS) crystals are synthesized by a simple and efficient ambient pressure chemical vapor deposition (CVD) method using a single-source precursor of Ga2S3. The synthesized GaS structures involve triangular monolayer domains and multilayer flakes with thickness of 1 and 15 nm, respectively. Regions of continuous films of GaS are also achieved with about 0.7 cm2 uniform coverage. This is achieved by using hydrogen carrier gas and the horizontally placed SiO2/Si substrates. Electron microscopy and spectroscopic measurements are used to characteristic the CVD-grown materials. This provides important insights into novel approaches for enlarging the domain size of GaS crystals and understanding of the growth mechanism using this precursor system.

SUBMITTER: Wang X 

PROVIDER: S-EPMC6068597 | biostudies-literature | 2018 Jul

REPOSITORIES: biostudies-literature

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Chemical Vapor Deposition Growth of Two-Dimensional Monolayer Gallium Sulfide Crystals Using Hydrogen Reduction of Ga<sub>2</sub>S<sub>3</sub>.

Wang Xiaochen X   Sheng Yuewen Y   Chang Ren-Jie RJ   Lee Ja Kyung JK   Zhou Yingqiu Y   Li Sha S   Chen Tongxin T   Huang Hefu H   Porter Benjamin F BF   Bhaskaran Harish H   Warner Jamie H JH  

ACS omega 20180716 7


Two-dimensional gallium sulfide (GaS) crystals are synthesized by a simple and efficient ambient pressure chemical vapor deposition (CVD) method using a single-source precursor of Ga<sub>2</sub>S<sub>3</sub>. The synthesized GaS structures involve triangular monolayer domains and multilayer flakes with thickness of 1 and 15 nm, respectively. Regions of continuous films of GaS are also achieved with about 0.7 cm<sup>2</sup> uniform coverage. This is achieved by using hydrogen carrier gas and the  ...[more]

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