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Chemical Vapor Deposition of High-Quality Large-Sized MoS₂ Crystals on Silicon Dioxide Substrates.

ABSTRACT: Large-sized MoS₂ crystals can be grown on SiO₂/Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS₂ crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS₂ crystals can reach ≈30 cm² V^-1 s^-1, which is comparable to those of exfoliated flakes.

SUBMITTER: Chen J

PROVIDER: S-EPMC5071677 | biostudies-literature | 2016 Aug

REPOSITORIES: biostudies-literature

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Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates.

Chen Jianyi J Tang Wei W Tian Bingbing B Liu Bo B Zhao Xiaoxu X Liu Yanpeng Y Ren Tianhua T Liu Wei W Geng Dechao D Jeong Hu Young HY Shin Hyeon Suk HS Zhou Wu W Loh Kian Ping KP

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20160331 8

Large-sized MoS2 crystals can be grown on SiO2/Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS2 crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS2 crystals can reach ≈30 cm2 V-1 s-1, which is comparable to those of exfoliated flakes. ...[more]

PMID: 27818906

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