Two-Step Growth of Uniform Monolayer MoS₂ Nanosheets by Metal-Organic Chemical Vapor Deposition.

ABSTRACT: To achieve large area growth of transition metal dichalcogenides of uniform monolayer thickness, we demonstrate metal-organic chemical vapor deposition (MOCVD) growth under low pressure followed by a high-temperature sulfurization process under atmospheric pressure (AP). Following sulfurization, the MOCVD-grown continuous MoS₂ film transforms into compact triangular crystals of uniform monolayer thickness as confirmed from the sharp distinct photoluminescence peak at 1.8 eV. Raman and X-ray photoelectron spectroscopies confirm that the structural disorders and chalcogen vacancies inherent to the as-grown MOCVD film are substantially healed and carbon/oxygen contaminations are heavily suppressed. The as-grown MOCVD film has a Mo/S ratio of 1:1.6 and an average defect length of ∼1

SUBMITTER: Chowdhury S 

PROVIDER: S-EPMC8153749 | biostudies-literature | 2021 Apr

REPOSITORIES: biostudies-literature