Ontology highlight
ABSTRACT:
SUBMITTER: Xu X
PROVIDER: S-EPMC6299710 | biostudies-literature | 2018 Dec
REPOSITORIES: biostudies-literature
Xu Xiao X Xie Lin L Lou Qing Q Wu Di D He Jiaqing J
Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20181012 12
An ultrahigh figure of merit ZT value ≈2.4 at 773 K for p-type pseudo-layered Sb<sub>2</sub>Te<sub>3</sub>(GeTe)<sub>17</sub> along the parallel direction is reported by synergistically optimizing its electrical and thermal properties via vacancy engineering. The microstructural origin of thermoelectric property enhancement is studied by spherical aberration corrected transmission electron microscopy and its in situ mode. The results reveal that upon annealing, Ge vacancy gaps in quenched sample ...[more]