Unknown

Dataset Information

0

Boosting the Thermoelectric Performance of Pseudo-Layered Sb2Te3(GeTe) n via Vacancy Engineering.

ABSTRACT: An ultrahigh figure of merit ZT value ?2.4 at 773 K for p-type pseudo-layered Sb2Te3(GeTe)17 along the parallel direction is reported by synergistically optimizing its electrical and thermal properties via vacancy engineering. The microstructural origin of thermoelectric property enhancement is studied by spherical aberration corrected transmission electron microscopy and its in situ mode. The results reveal that upon annealing, Ge vacancy gaps in quenched samples tend to migrate and recombine into long-range gaps in order to minimize the elastic and electrostatic energies. The recombination of Ge gaps would lead to an overall reduction of carrier concentration and electrical thermal conductivity. The detailed study of Ge vacancies migration via heat treatment and its effects on thermoelectric performance in pseudo-layered Sb2Te3(GeTe)17 materials can provide enlightening clues for future research in a number of thermoelectric materials of similar structures.

SUBMITTER: Xu X 

PROVIDER: S-EPMC6299710 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature

Json Xml
altmetric image

Publications

Boosting the Thermoelectric Performance of Pseudo-Layered Sb<sub>2</sub>Te<sub>3</sub>(GeTe) <i><sub>n</sub></i> via Vacancy Engineering.

Xu Xiao X   Xie Lin L   Lou Qing Q   Wu Di D   He Jiaqing J  

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20181012 12

An ultrahigh figure of merit ZT value ≈2.4 at 773 K for p-type pseudo-layered Sb<sub>2</sub>Te<sub>3</sub>(GeTe)<sub>17</sub> along the parallel direction is reported by synergistically optimizing its electrical and thermal properties via vacancy engineering. The microstructural origin of thermoelectric property enhancement is studied by spherical aberration corrected transmission electron microscopy and its in situ mode. The results reveal that upon annealing, Ge vacancy gaps in quenched sample  ...[more]

Similar Datasets

Unknown Interface Analysis of MOCVD Grown GeTe/Sb<sub>2</sub>Te<sub>3</sub> and Ge-Rich Ge-Sb-Te/Sb<sub>2</sub>Te<sub>3</sub> Core-Shell Nanowires.
| S-EPMC9146787 | biostudies-literature
Unknown Manipulation of dangling bonds of interfacial states coupled in GeTe-rich GeTe/Sb<sub>2</sub>Te<sub>3</sub> superlattices.
| S-EPMC5725461 | biostudies-literature
Unknown A facile energy-saving route of fabricating thermoelectric Sb<sub>2</sub>Te<sub>3</sub>-Te nanocomposites and nanosized Te.
| S-EPMC6227969 | biostudies-literature
Unknown Probing embedded topological modes in bulk-like GeTe-Sb<sub>2</sub>Te<sub>3</sub> heterostructures.
| S-EPMC7732994 | biostudies-literature
Unknown Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)<sub>m</sub> (Sb<sub>2</sub> Te<sub>3</sub> )<sub>n</sub> Lamellae.
| S-EPMC10767439 | biostudies-literature
Unknown Sb<sub>2</sub>Te<sub>3</sub> nanoparticle-containing single-walled carbon nanotube films coated with Sb<sub>2</sub>Te<sub>3</sub> electrodeposited layers for thermoelectric applications.
| S-EPMC10082793 | biostudies-literature
Unknown Strain Relaxation in "2D/2D and 2D/3D Systems": Highly Textured Mica/Bi<sub>2</sub>Te<sub>3</sub>, Sb<sub>2</sub>Te<sub>3</sub>/Bi<sub>2</sub>Te<sub>3</sub>, and Bi<sub>2</sub>Te<sub>3</sub>/GeTe Heterostructures.
| S-EPMC7905873 | biostudies-literature
Unknown Band Degeneracy and Anisotropy Enhances Thermoelectric Performance from Sb<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> to Sc<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub>.
| S-EPMC11228999 | biostudies-literature
Unknown Influence of Nanoparticle Processing on the Thermoelectric Properties of (Bi<sub>x</sub> Sb<sub>1-X</sub> )<sub>2</sub> Te<sub>3</sub> Ternary Alloys.
| S-EPMC7874259 | biostudies-literature
Unknown Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi₂Te₃ and Sb₂Te₃ Thermoelectric Materials.
| S-EPMC5459149 | biostudies-other