Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics.

ABSTRACT: We propose germanium-vacancy complexes (GeVn) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.

SUBMITTER: Achilli S

PROVIDER: S-EPMC6303345 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

GeV<sub>n</sub> complexes for silicon-based room-temperature single-atom nanoelectronics.

Achilli Simona S Manini Nicola N Onida Giovanni G Shinada Takahiro T Tanii Takashi T Prati Enrico E

Scientific reports 20181221 1

We propose germanium-vacancy complexes (GeV<sub>n</sub>) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefun ...[more]

PMID: 30575772

Similar Datasets

Room-temperature single-photon emitters in silicon nitride.

Project description:[Figure: see text].

| S-EPMC8664256 | biostudies-literature

Heat dissipation in quasi-ballistic single-atom contacts at room temperature.

Project description:We report on evaluations of local heating in Au single-atom chains at room temperature. We performed onsite thermometry of atomic-scale Au junctions under applied sinusoidal voltage of variable amplitudes. The AC approach enabled to preclude electromigration effects for characterizing the influence of energy dissipations on the lifetime. We elucidated nonlinear increase in the effective temperature of the current-carrying single-atom chains with the voltage amplitudes, which was attributed to subtle interplay between electron-phonon scattering and electron-mediated thermal transport in the quasi-ballistic conductor. We also found that only 0.2% of the electric power contributed to local heating while the majority was consumed at the diffusive bank. The present findings can be used for thermal management of future integrated nanoelectronics.

| S-EPMC6904740 | biostudies-literature

Bright room temperature single photon source at telecom range in cubic silicon carbide.

Project description:Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitters are photostable and bright at room temperature with a count rate of?~?MHz. Altogether with the fact that SiC is a growth and fabrication-friendly material, our result may be relevant for future applications in quantum communication technology.

| S-EPMC6173757 | biostudies-literature

Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast.

Project description:Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room-temperature single-spin manipulation of colour centres in SiC has been demonstrated, the typically detected contrast is less than 2[Formula: see text], and the photon count rate is also low. Here, we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast ([Formula: see text]) and a high photon count rate (150 kilo counts per second) under ambient conditions, which are competitive with the nitrogen-vacancy centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.

| S-EPMC9160373 | biostudies-literature

Silicon carbide light-emitting diode as a prospective room temperature source for single photons.

Project description:Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.

| S-EPMC3622138 | biostudies-other

White-light emission from a single heavy atom-free molecule with room temperature phosphorescence, mechanochromism and thermochromism.

Project description:Two heavy atom-free luminophores (SHB2t and SDB2t) with simple molecular structures have been synthesized via Suzuki coupling reactions in which both display white-light emission with prompt fluorescence and room temperature phosphorescence (RTP) in the solid state. The impressive RTP of the luminophores is produced by a synergistic effect of the strong intermolecular hydrogen bonding in addition to the spin-orbit coupling of the sulfonyl oxygen atoms and the moderate singlet-triplet energy gaps (ΔEST). These factors facilitate the intersystem crossing (ISC) process to generate triplet excitons in which the molecular conformations become immobilized to effectively suppress radiationless decay. Under the stimuli of mechanical force and solvent vapor, the RTP of SHB2t and SDB2t can be simply turned off and on by breaking and reforming the robust hydrogen bonding, which leads to remarkable and reversible mechanochromism between white and deep-blue emission. Moreover, two different thermochromic processes have been observed for the pristine and ground samples of SDB2t, in which a tricolor switching system between white, deep-blue and blue emission has been successfully achieved through the sequential control of grinding, heating and fuming. From detailed studies we have determined that the mechanism for the thermochromism of SDB2t is correlated with the rearrangement of the white-light emitting molecules to a new packing mode without RTP emission.

| S-EPMC5430137 | biostudies-literature

Room temperature hydrosilylation of silicon nanocrystals with bifunctional terminal alkenes.

Project description:H-terminated Si nanocrystals undergo room temperature hydrosilylation with bifunctional alkenes with distal polar moieties-ethyl ester, methyl ester, or carboxylic acids-without the aid of light or added catalyst. The passivated Si nanocrystals exhibit bright photoluminescence (PL) and disperse in polar solvents, including water. We propose a reaction mechanism in which ester or carboxylic acid groups facilitate direct nucleophilic attack of the highly curved Si surface of the nanocrystals by the alkene.

| S-EPMC3580235 | biostudies-literature

Room temperature magneto-optic effect in silicon light-emitting diodes.

Project description:In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, e.g. on the electro-luminescence of molecular semiconductors. Although silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging: silicon's indirect band-gap causes an inefficient emission and it is difficult to separate spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges and measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry, thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300% near room temperature in a seven Tesla magnetic field, showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.

| S-EPMC5785965 | biostudies-literature

Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon.

Project description:Additional functionalities on semiconductor microchips are progressively important in order to keep up with the ever-increasing demand for more powerful computational systems. Monolithic III-V integration on Si promises to merge mature Si CMOS processing technology with III-V semiconductors possessing superior material properties, e. g., in terms of carrier mobility or band structure (direct band gap). In particular, Si photonics would strongly benefit from an integration scheme for active III-V optoelectronic devices in order to enable low-cost and power-efficient electronic-photonic integrated circuits. We report on room-temperature lasing from AlGaAs/GaAs microdisk cavities monolithically integrated on Si(001) using a selective epitaxial growth technique called template-assisted selective epitaxy. The grown gain material possesses high optical quality without indication of threading dislocations, antiphase boundaries, or twin defects. The devices exhibit single-mode lasing at T < 250 K and lasing thresholds between 2 and 18 pJ/pulse depending on the cavity size (1-3 μm in diameter).

| S-EPMC6007962 | biostudies-literature

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors.

Project description:Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

| S-EPMC7142779 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data