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GeVn complexes for silicon-based room-temperature single-atom nanoelectronics.

ABSTRACT: We propose germanium-vacancy complexes (GeVn) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.

SUBMITTER: Achilli S

PROVIDER: S-EPMC6303345 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature

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GeV<sub>n</sub> complexes for silicon-based room-temperature single-atom nanoelectronics.

Achilli Simona S Manini Nicola N Onida Giovanni G Shinada Takahiro T Tanii Takashi T Prati Enrico E

Scientific reports 20181221 1

We propose germanium-vacancy complexes (GeV<sub>n</sub>) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefun ...[more]

PMID: 30575772

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