Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

A Single-Step Route to Single-Crystal Molybdenum Disulphide (MoS₂) Monolayer domains.

ABSTRACT: We report a simple, single-cycle synthetic method for forming highly-crystalline, micron-sized monolayer domains of phase-pure MoS₂. This method combines liquid chemistry with discrete, layer-by-layer deposition from a novel Mo precursor. Single-crystalline MoS₂ with domain sizes up to 100 μm have been obtained and characterised by optical and electron microscopy as well as Raman and photoluminescence spectroscopy.

SUBMITTER: Khan H

PROVIDER: S-EPMC6411997 | biostudies-literature | 2019 Mar

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

A Single-Step Route to Single-Crystal Molybdenum Disulphide (MoS2) Monolayer domains.

Khan Hamid H Medina Henry H Tan Lee Kheng LK Tjiu Wengweei W Boden Stuart A SA Teng Jinghua J Nandhakumar Iris I

Scientific reports 20190311 1

We report a simple, single-cycle synthetic method for forming highly-crystalline, micron-sized monolayer domains of phase-pure MoS2. This method combines liquid chemistry with discrete, layer-by-layer deposition from a novel Mo precursor. Single-crystalline MoS2 with domain sizes up to 100 μm have been obtained and characterised by optical and electron microscopy as well as Raman and photoluminescence spectroscopy. ...[more]

PMID: 30858461

Similar Datasets

Dichroic spin-valley photocurrent in monolayer molybdenum disulphide.

Project description:The aim of valleytronics is to exploit confinement of charge carriers in local valleys of the energy bands of semiconductors as an additional degree of freedom in optoelectronic devices. Thanks to strong direct excitonic transitions in spin-coupled K valleys, monolayer molybdenum disulphide is a rapidly emerging valleytronic material, with high valley polarization in photoluminescence. Here we elucidate the excitonic physics of this material by light helicity-dependent photocurrent studies of phototransistors. We demonstrate that large photocurrent dichroism (up to 60%) can also be achieved in high-quality molybdenum disulphide monolayers grown by chemical vapour deposition, due to the circular photogalvanic effect on resonant excitations. This opens up new opportunities for valleytonic applications in which selective control of spin-valley-coupled photocurrents can be used to implement polarization-sensitive light-detection schemes or integrated spintronic devices, as well as biochemical sensors operating at visible frequencies.

| S-EPMC4506497 | biostudies-literature

Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control.

Project description:Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS2 monolayers on industry-compatible substrates of c-plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO3 precursor ratio control. The unidirectional alignment and seamless stitching of MoS2 domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS2 single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm2v-1s-1, and on/off ratio of ~109. Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore's law and industrial applications of 2D electronic circuits.

| S-EPMC10901795 | biostudies-literature

Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide.

Project description:The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this 'artificial atom' concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics.

| S-EPMC4557352 | biostudies-literature

A vapor-phase-assisted growth route for large-scale uniform deposition of MoS2 monolayer films.

Project description:In this work a vapor-phase-assisted approach for the synthesis of monolayer MoS2 is demonstrated, based on the sulfurization of thin MoO3-x precursor films in an H2S atmosphere. We discuss the co-existence of various possible growth mechanisms, involving solid-gas and vapor-gas reactions. Different sequences were applied in order to control the growth mechanism and to obtain monolayer films. These variations include the sample temperature and a time delay for the injection of H2S into the reaction chamber. The optimized combination allows for tuning the process route towards the potentially more favorable vapor-gas reactions, leading to an improved material distribution on the substrate surface. Raman and photoluminescence (PL) spectroscopy confirm the formation of ultrathin MoS2 films on SiO2/Si substrates with a narrow thickness distribution in the monolayer range on length scales of a few millimeters. Best results are achieved in a temperature range of 950-1000 °C showing improved uniformity in terms of Raman and PL line shapes. The obtained films exhibit a PL yield similar to mechanically exfoliated monolayer flakes, demonstrating the high optical quality of the prepared layers.

| S-EPMC9059526 | biostudies-literature

Two-Step Growth of Uniform Monolayer MoS2 Nanosheets by Metal-Organic Chemical Vapor Deposition.

Project description:To achieve large area growth of transition metal dichalcogenides of uniform monolayer thickness, we demonstrate metal-organic chemical vapor deposition (MOCVD) growth under low pressure followed by a high-temperature sulfurization process under atmospheric pressure (AP). Following sulfurization, the MOCVD-grown continuous MoS2 film transforms into compact triangular crystals of uniform monolayer thickness as confirmed from the sharp distinct photoluminescence peak at 1.8 eV. Raman and X-ray photoelectron spectroscopies confirm that the structural disorders and chalcogen vacancies inherent to the as-grown MOCVD film are substantially healed and carbon/oxygen contaminations are heavily suppressed. The as-grown MOCVD film has a Mo/S ratio of 1:1.6 and an average defect length of ∼1.56 nm, which improve to 1:1.97 and ∼21 nm, respectively, upon sulfurization. The effect of temperature and duration of the sulfurization process on the morphology and stoichiometry of the grown film is investigated in detail. Compared to the APCVD growth, this two-step growth process shows more homogenous distribution of the triangular monolayer MoS2 domains across the entire substrate, while demonstrating comparable electrical performance.

| S-EPMC8153749 | biostudies-literature

Nanoindentation on Monolayer MoS2 Kirigami.

Project description:Mechanical properties of materials can be altered significantly by the ancient art of kirigami. We study the mechanical properties of atomically thin kirigami membranes of MoS2 using molecular dynamics simulations. Nanoindentation simulations are performed to study the mechanical response of rectangular and hexagonal kirigami structures. Dramatic changes are observed in the ductility of monolayer kirigami MoS2 compared with those of a pristine MoS2 monolayer. Load-displacement curves of kirigami structures exhibit negligible hysteresis, and kirigami structures display remarkable elastic recovery upon unloading. Defects formed at the edges and corners of kirigami structures play an important role in the mechanical response of the membranes.

| S-EPMC6649064 | biostudies-literature

Valley-selective circular dichroism of monolayer molybdenum disulphide.

Project description:A two-dimensional honeycomb lattice harbours a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K(±). It is particularly appealing to exploit this emergent degree of freedom of charge carriers, in what is termed 'valleytronics'. The physics of valleys mimics that of spin, and will make possible devices, analogous to spintronics, such as valley filter and valve, and optoelectronic Hall devices, all very promising for next-generation electronics. The key challenge lies with achieving valley polarization, of which a convincing demonstration in a two-dimensional honeycomb structure remains evasive. Here we show, using first principles calculations, that monolayer molybdenum disulphide is an ideal material for valleytronics, for which valley polarization is achievable via valley-selective circular dichroism arising from its unique symmetry. We also provide experimental evidence by measuring the circularly polarized photoluminescence on monolayer molybdenum disulphide, which shows up to 50% polarization.

| S-EPMC3621397 | biostudies-other

Molybdenum(IV) dithiocarboxylates as single-source precursors for AACVD of MoS2 thin films.

Project description:Tetrakis(dithiocarboxylato)molybdenum(IV) complexes of the type Mo(S2CR)4 (R = Me, Et, iPr, Ph) were synthesized, characterized, and prescreened as precursors for aerosol assisted chemical vapor deposition (AACVD) of MoS2 thin films. The thermal behavior of the complexes as determined by TGA and GC-MS was appropriate for AACVD, although the complexes were not sufficiently volatile for conventional CVD bubbler systems. Thin films of MoS2 were grown by AACVD at 500 °C from solutions of Mo(S2CMe)4 in toluene. The films were characterized by GIXRD diffraction patterns which correspond to a 2H-MoS2 structure in the deposited film. Mo-S bonding in 2H-MoS2 was further confirmed by XPS and EDS. The film morphology, vertically oriented structure, and thickness (2.54 μm) were evaluated by FE-SEM. The Raman E12g and A1g vibrational modes of crystalline 2H-MoS2 were observed. These results demonstrate the use of dithiocarboxylato ligands for the chemical vapor deposition of metal sulfides.

| S-EPMC9426634 | biostudies-literature

Ultrafast transient sub-bandgap absorption of monolayer MoS2.

Project description:The light-matter interaction in materials is of remarkable interest for various photonic and optoelectronic applications, which is intrinsically determined by the bandgap of the materials involved. To extend the applications beyond the bandgap limit, it is of great significance to study the light-matter interaction below the material bandgap. Here, we report the ultrafast transient absorption of monolayer molybdenum disulfide in its sub-bandgap region from ~0.86 µm to 1.4 µm. Even though this spectral range is below the bandgap, we observe a significant absorbance enhancement up to ~4.2% in the monolayer molybdenum disulfide (comparable to its absorption within the bandgap region) due to pump-induced absorption by the excited carrier states. The different rise times of the transient absorption at different wavelengths indicate the various contributions of the different carrier states (i.e., real carrier states in the short-wavelength region of ~<1 µm, and exciton states in the long wavelength region of ~>1 µm). Our results elucidate the fundamental understanding regarding the optical properties, excited carrier states, and carrier dynamics in the technologically important near-infrared region, which potentially leads to various photonic and optoelectronic applications (e.g., excited-state-based photodetectors and modulators) of two-dimensional materials and their heterostructures beyond their intrinsic bandgap limitations.

| S-EPMC7846580 | biostudies-literature

Strain-Enhanced Large-Area Monolayer MoS2 Photodetectors.

Project description:In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.

| S-EPMC10982932 | biostudies-literature