Dataset Information

Molybdenum(IV) dithiocarboxylates as single-source precursors for AACVD of MoS₂ thin films.

ABSTRACT: Tetrakis(dithiocarboxylato)molybdenum(IV) complexes of the type Mo(S₂CR)₄ (R = Me, Et, ⁱPr, Ph) were synthesized, characterized, and prescreened as precursors for aerosol assisted chemical vapor deposition (AACVD) of MoS₂ thin films. The thermal behavior of the complexes as determined by TGA and GC-MS was appropriate for AACVD, although the complexes were not sufficiently volatile for conventional CVD bubbler systems. Thin films of MoS₂ were grown by AACVD at 500 °C from solutions of Mo(S₂CMe)₄ in toluene. The films were characterized by GIXRD diffraction patterns which correspond to a 2H-MoS₂ structure in the deposited film. Mo-S bonding in 2H-MoS₂ was further confirmed by XPS and EDS. The film morphology, vertically oriented structure, and thickness (2.54 μm) were evaluated by FE-SEM. The Raman E¹_2g and A_1g vibrational modes of crystalline 2H-MoS₂ were observed. These results demonstrate the use of dithiocarboxylato ligands for the chemical vapor deposition of metal sulfides.

SUBMITTER: Muhammad S

PROVIDER: S-EPMC9426634 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature

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Molybdenum(IV) dithiocarboxylates as single-source precursors for AACVD of MoS2 thin films.

Muhammad Saleh S Ferenczy Erik T ET Germaine Ian M IM Wagner J Tyler JT Jan Muhammad T MT McElwee-White Lisa L

Dalton transactions (Cambridge, England : 2003) 20220823 33

Tetrakis(dithiocarboxylato)molybdenum(IV) complexes of the type Mo(S2CR)4 (R = Me, Et, iPr, Ph) were synthesized, characterized, and prescreened as precursors for aerosol assisted chemical vapor deposition (AACVD) of MoS2 thin films. The thermal behavior of the complexes as determined by TGA and GC-MS was appropriate for AACVD, although the complexes were not sufficiently volatile for conventional CVD bubbler systems. Thin films of MoS2</su ...[more]

PMID: 35913376

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Project description:Cadmium sulfide (CdS) is an important semiconductor for electronic and photovoltaic applications, particularly when utilized as a thin film for window layers in CdTe solar cells. Deposition of thin-film CdS through the decomposition of single-source precursors is an attractive approach due to the facile, low-temperature, and rapid nature of this approach. Tailoring the precursor to affect the decomposition properties is commonly employed to tune desirable temperatures of decomposition. However, altering the precursor structure and the effect this has on the nature of the deposited material is an area far less commonly investigated. Here, we seek to investigate this by altering the ligands around the Cd metal center to increase the steric hindrance of the precursor and investigate the effect this has on the decomposition properties and the properties of deposited thin-film CdS from these precursors. For this, we report the synthesis of four CdS precursors with xanthate and pyridyl ligands ([Cd(n-ethyl xanthate)2(3-methyl pyridine)2] [1], [Cd(n-ethyl xanthate)2(3,5-lutidine)2] [2], [(Cd2(isopropyl xanthate)4(3-methyl pyridine)2)n] [3], and [Cd(isopropyl xanthate)2(3,5-lutidine)2] [4]). These single-source precursors for CdS were fully characterized by elemental analysis, NMR spectroscopy, single-crystal X-ray diffraction (XRD), and thermogravimetric analysis. It was found that even with subtle alterations in the xanthate (n-ethyl to isopropyl) and pyridine (3-methyl and 3,5-dimethyl) ligands, a range of hexa-coordinate precursors were formed (two with cis configuration, one with trans configuration, and one as a one-dimensional (1D) polymer). These four precursors were then used in aerosol-assisted chemical vapor deposition (AACVD) and spin-coating experiments to deposit eight thin films of CdS, which were characterized by Raman spectroscopy, powder X-ray diffraction, and scanning electron microscopy. Comparative quantitative information concerning film thickness and surface roughness was also determined by atomic force microscopy. Finally, the optical properties of all thin films were characterized by ultraviolet-visible (UV-Vis) absorption spectroscopy, from which the band gap of each deposited film was determined to be commensurate with that of bulk CdS (ca. 2.4 eV).

Dataset Information

Molybdenum(IV) dithiocarboxylates as single-source precursors for AACVD of MoS₂ thin films.

Publications

Molybdenum(IV) dithiocarboxylates as single-source precursors for AACVD of MoS<sub>2</sub> thin films.

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