Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells.

ABSTRACT: In this paper, a numerical model allows to analyze the photovoltaic parameters according to the electronic properties of InxGa1-xN/GaN MQW solar cells under the effect of temperature, the number of quantum wells and indium composition. The numerical investigation starts from the evaluation through the finite difference (FDM) simulation of the self-consistent method coupled with the photovoltaic parameters taking into account the effects of the spontaneous and piezoelectric polarization. The results found were consistent with the literature. As expected, the temperature had a negative impact on the performance of InGaN/GaN MQW solar cells. However, increasing the number of quantum wells improves cell performance. This positive impact further improves with the increase in the indium rate. Th

SUBMITTER: Chouchen B 

PROVIDER: S-EPMC6514574 | biostudies-literature | 2019 Apr

REPOSITORIES: biostudies-literature