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Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects.

ABSTRACT: Multilevel metal interconnects are crucial for the development of large-scale organic integrated circuits. In particular, three-dimensional integrated circuits require a large number of vertical interconnects between layers. Here, we present a novel multilevel metal interconnect scheme that involves solvent-free patterning of insulator layers to form an interconnecting area that ensures a reliable electrical connection between two metals in different layers. Using a highly reliable interconnect method, the highest stacked organic transistors to date, a three-dimensional organic integrated circuits consisting of 5 transistors and 20 metal layers, is successfully fabricated in a solvent-free manner. All transistors exhibit outstanding device characteristics, including a high on/off current ratio of ~10⁷, no hysteresis behavior, and excellent device-to-device uniformity. We also demonstrate two vertically-stacked complementary inverter circuits that use transistors on 4 different floors. All circuits show superb inverter characteristics with a 100% output voltage swing and gain up to 35?V per V.

SUBMITTER: Yoo H

PROVIDER: S-EPMC6546689 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature

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Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects.

Yoo Hocheon H Park Hongkeun H Yoo Seunghyun S On Sungmin S Seong Hyejeong H Im Sung Gap SG Kim Jae-Joon JJ

Nature communications 20190603 1

Multilevel metal interconnects are crucial for the development of large-scale organic integrated circuits. In particular, three-dimensional integrated circuits require a large number of vertical interconnects between layers. Here, we present a novel multilevel metal interconnect scheme that involves solvent-free patterning of insulator layers to form an interconnecting area that ensures a reliable electrical connection between two metals in different layers. Using a highly reliable interconnect ...[more]

PMID: 31160606

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Project description:Achieving a molecular-level understanding of how the structures and compositions of metal-organic frameworks (MOFs) influence their charge carrier concentration and charge transport mechanism-the two key parameters of electrical conductivity-is essential for the successful development of electrically conducting MOFs, which have recently emerged as one of the most coveted functional materials due to their diverse potential applications in advanced electronics and energy technologies. Herein, we have constructed four new alkali metal (Na, K, Rb, and Cs) frameworks based on an electron-rich tetrathiafulvalene tetracarboxylate (TTFTC) ligand, which formed continuous π-stacks, albeit with different π-π-stacking and S⋯S distances (d π-π and d S⋯S). These MOFs also contained different amounts of aerobically oxidized TTFTC˙+ radical cations that were quantified by electron spin resonance (ESR) spectroscopy. Density functional theory calculations and diffuse reflectance spectroscopy demonstrated that depending on the π-π-interaction and TTFTC˙+ population, these MOFs enjoyed varying degrees of TTFTC/TTFTC˙+ intervalence charge transfer (IVCT) interactions, which commensurately affected their electronic and optical band gaps and electrical conductivity. Having the shortest d π-π (3.39 Å) and the largest initial TTFTC˙+ population (∼23%), the oxidized Na-MOF 1-ox displayed the narrowest band gap (1.33 eV) and the highest room temperature electrical conductivity (3.6 × 10-5 S cm-1), whereas owing to its longest d π-π (3.68 Å) and a negligible TTFTC˙+ population, neutral Cs-MOF 4 exhibited the widest band gap (2.15 eV) and the lowest electrical conductivity (1.8 × 10-7 S cm-1). The freshly prepared but not optimally oxidized K-MOF 2 and Rb-MOF 3 initially displayed intermediate band gaps and conductivity, however, upon prolonged aerobic oxidation, which raised the TTFTC˙+ population to saturation levels (∼25 and 10%, respectively), the resulting 2-ox and 3-ox displayed much narrower band gaps (∼1.35 eV) and higher electrical conductivity (6.6 × 10-5 and 4.7 × 10-5 S cm-1, respectively). The computational studies indicated that charge movement in these MOFs occurred predominantly through the π-stacked ligands, while the experimental results displayed the combined effects of π-π-interactions, TTFTC˙+ population, and TTFTC/TTFTC˙+ IVCT interaction on their electronic and optical properties, demonstrating that IVCT interactions between the mixed-valent ligands could be exploited as an effective design strategy to develop electrically conducting MOFs.

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Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects.

Publications

Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects.

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