Ontology highlight
ABSTRACT:
SUBMITTER: Yao Z
PROVIDER: S-EPMC6677547 | biostudies-literature | 2019 Aug
REPOSITORIES: biostudies-literature
Science advances 20190802 8
Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still challenging in this field. Herein, we report a RRAM device based on a chiral metal-organic framework (MOF) FJU-23-H<sub>2</sub>O with switched hydrogen bond pathway within its channels, exhibiting an ...[more]