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Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress.

ABSTRACT: This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.

SUBMITTER: Rahman MM 

PROVIDER: S-EPMC7153472 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature

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Border Trap Characterizations of Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress.

Rahman Md Mamunur MM   Kim Dae-Hyun DH   Kim Tae-Woo TW  

Nanomaterials (Basel, Switzerland) 20200315 3

This study represents a comparison of the border trap behavior and reliability between HfO<sub>2</sub> and ZrO<sub>2</sub> films on <i>n</i>-In<sub>0.53</sub>Ga<sub>0.47</sub>As with an Al<sub>2</sub>O<sub>3</sub> interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N<sub>2</sub>:H<sub>2</sub> mixed FGA passivates the border trap quite well, whereas N<sub>2</sub>-based RTA performs better on interface traps. Al<sub  ...[more]

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