CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures.

ABSTRACT: Heterostructures (HS) have always been in attraction due to their inherited properties and different important applications. Integration of a phase-change material (PCM) with HS can tremendously extend the operating and application range using the "phase-tuning" of PCM for any optoelectronic devices. In the present study, we report a detailed study of electrical and optoelectronic characteristics of a p-p and p-n HS combining Ge₂Sb₂Te₅ (GST) and Si. Reasonable 2 order of resistance switching is achieved by thermal annealing. The changes in optical properties are analysed using Ellipsometry, UV-Vis-NIR and Raman spectroscopy to speculate the optoelectronic behaviour of GST/Si samples. The optical and electrical characterization were analysed with aluminium (

SUBMITTER: Srivastava V 

PROVIDER: S-EPMC7341851 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature