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Investigation of Boron Distribution at the SiO₂/Si Interface of Monolayer Doping.

ABSTRACT: Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further improvement. We examine and compare the doping profile and dopant activation with two different heating sources (rapid thermal annealing and microwave annealing), especially focused on SiO₂/Si interface. These heating sources are used for junction diode fabrication, to realize current switching behavior. Direct observations of monolayer doping profiles, especially inside the capping oxide, are discussed to provide quantitative information for dopant concentration. This can provide significant information for better tuning of surface chemistries and process protocols applied in monolayer doping methodologies.

SUBMITTER: Hsu SH

PROVIDER: S-EPMC7807803 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature

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Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping.

Hsu Shu-Han SH Wan Chia-Chen CC Cho Ta-Chun TC Lee Yao-Jen YJ

ACS omega 20210104 1

Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further improvement. We examine and compare the doping profile and dopant activation with two different heating sources (rapid thermal annealing and microwave annealing), especially focused on SiO2/Si interface. These heating sources are used for junct ...[more]

PMID: 33458525

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