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Adsorption of Silicon-Containing Dendrimers: Effects of Chemical Composition, Structure, and Generation Number.


ABSTRACT: We studied the conformational behavior of silicon-containing dendrimers during their adsorption onto a flat impenetrable surface by molecular dynamics (MD) simulations. Four homologous series of dendrimers from the 4th up to the 7th generations were modeled, namely, two types of carbosilane dendrimers differing by the functionality of the core Si atom and two types of siloxane dendrimers with different lengths of the spacers. Comparative analysis of the fractions of adsorbed atoms belonging to various structural layers within dendrimers as well as density profiles allowed us to elucidate not only some general trends but also the effects determined by dendrimer specificity. In particular, it was found that in contrast to the carbosilane dendrimers interacting with the adsorbing surface mainly by their peripheral layers, the siloxane dendrimers with the longer -O-Si(CH3)2-O spacers expose atoms from their interior to the surface spreading out on it. These findings are important for the design of functional materials on the basis of silicon-containing dendrimers.

SUBMITTER: Kurbatov AO 

PROVIDER: S-EPMC7917902 | biostudies-literature | 2021 Feb

REPOSITORIES: biostudies-literature

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Adsorption of Silicon-Containing Dendrimers: Effects of Chemical Composition, Structure, and Generation Number.

Kurbatov Andrey O AO   Balabaev Nikolay K NK   Mazo Mikhail A MA   Kramarenko Elena Yu EY  

Polymers 20210213 4


We studied the conformational behavior of silicon-containing dendrimers during their adsorption onto a flat impenetrable surface by molecular dynamics (MD) simulations. Four homologous series of dendrimers from the 4th up to the 7th generations were modeled, namely, two types of carbosilane dendrimers differing by the functionality of the core Si atom and two types of siloxane dendrimers with different lengths of the spacers. Comparative analysis of the fractions of adsorbed atoms belonging to v  ...[more]

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