Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes.

ABSTRACT: Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many issues, which can significantly degrade RRAM performance. Therefore, it is necessary to optimize the sensing schemes to improve the application range of RRAM. In this paper, the issues faced by RRAM in advanced technology nodes are summarized. Then, the advantages and weaknesses in the novel design and optimization methodologies of sensing schemes are introduced in detail from three aspects, the reference schemes, sensing amplifier schemes, and bit line (BL)-enhancing schemes, according to the deve

SUBMITTER: Zhang D 

PROVIDER: S-EPMC8398062 | biostudies-literature | 2021 Jul

REPOSITORIES: biostudies-literature