Browse
Submit Data
Databases
API
Help

Dataset Information

23 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Inverse-cavity structure for low-threshold miniature lasers.

ABSTRACT: Creating micro and nano lasers, high threshold gain is an inherent problem that have critically restricted their great technological potentials. Here, we propose an inverse-cavity laser structure where its threshold gain in the shortest-cavity regime is order-of-magnitude lower than the conventional cavity configurations. In the proposed structure, a resonant feedback mechanism efficiently transfers external optical gain to the cavity mode at a higher rate for a shorter cavity, hence resulting in the threshold gain reducing with decreasing cavity length in stark contrast to the conventional cavity structures. We provide a fundamental theory and rigorous numerical analyses confirming the feasibility of the proposed structure. Remarkably, the threshold gain reduces down by a factor ~ 10^-3 for a vertical-cavity surface-emitting laser structure and ~ 0.17 for a lattice-plasmonic nanocavity structure. Therefore, the proposed approach may produce extremely efficient miniature lasers desirable for variety of applications potentially beyond the present limitations.

SUBMITTER: Kim G

PROVIDER: S-EPMC9256698 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Ultra-low threshold continuous-wave quantum dot mini-BIC lasers.

Project description:Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW) operation have been a long sought-after component for photonic integrated circuits (PICs). Photonic bound states in the continuum (BICs), due to their excellent ability of trapping light and enhancing light-matter interaction, have been investigated in lasing configurations combining various BIC cavities and optical gain materials. However, the realization of BIC laser with a highly compact size and an ultra-low CW threshold has remained elusive. We demonstrate room temperature CW BIC lasers in the 1310 nm O-band wavelength range, by fabricating a miniaturized BIC cavity in an InAs/GaAs epitaxial quantum dot (QD) gain membrane. By enabling effective trapping of both light and carriers in all three dimensions, ultra-low threshold of 12 μW (0.052 kW cm-2) is achieved at room temperature. Single-mode lasing is also realized in cavities as small as only 5 × 5 unit cells (~2.5 × 2.5 μm2 cavity size) with a mode volume of 1.16(λ/n)3. The maximum operation temperature reaches 70 °C with a characteristic temperature of T0 ~93.9 K. With its advantages in terms of a small footprint, ultra-low power consumption, and adaptability for integration, the mini-BIC lasers offer a perspective light source for future PICs aimed at high-capacity optical communications, sensing and quantum information.

| S-EPMC10130040 | biostudies-literature

Sub-microWatt threshold nanoisland lasers.

Project description:Ultralow threshold nanolasers have been sought after as power efficient light sources in photonic integrated circuits. Here a single-cell nanobeam laser with a nanoisland quantum well is proposed and demonstrated. Continuous operation at 1.5 μm is achieved at room temperature with an ultralow lasing threshold of 210 nW in absorbed power. The size of the active medium is reduced to 0.7 × 0.25 × 0.02 μm(3) by removing the absorptive quantum well region surrounding the central cavity. Relatively thick (420 nm) InP slabs are employed to improve the thermal and mechanical characteristics. The nanoisland-based structures will provide a new platform to engineer fundamental light-matter interactions by controlling the size and the location of the nanoemitters, allowing the realization of highly efficient nanophotonic devices.

| S-EPMC4595645 | biostudies-literature

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity.

Project description:Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm-2, the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the δ-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (~ 4.0 λ) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.

| S-EPMC10562330 | biostudies-literature

Ultralow noise miniature external cavity semiconductor laser.

Project description:Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth.

| S-EPMC4491184 | biostudies-other

Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers.

Project description:Two-dimensional (2D) semiconductors are opening a new platform for revitalizing widely spread optoelectronic applications. The realisation of room-temperature vertical 2D lasing from monolayer semiconductors is fundamentally interesting and highly desired for appealing on-chip laser applications such as optical interconnects and supercomputing. Here, we present room-temperature low-threshold lasing from 2D semiconductor activated vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave pumping. 2D lasing is achieved from a 2D semiconductor. Structurally, dielectric oxides were used to construct the half-wavelength-thick cavity and distributed Bragg reflectors, in favour of single-mode operation and ultralow optical loss; in the cavity centre, the direct-bandgap monolayer WS2 was embedded as the gain medium, compatible with the planar VCSEL configuration and the monolithic integration technology. This work demonstrates 2D semiconductor activated VCSELs with desirable emission characteristics, which represents a major step towards practical optoelectronic applications of 2D semiconductor lasers.Two-dimensional materials have recently emerged as interesting materials for optoelectronic applications. Here, Shang et al. demonstrate two-dimensional semiconductor activated vertical-cavity surface-emitting lasers where both the gain material and the lasing characteristics are two-dimensional.

| S-EPMC5599555 | biostudies-literature

Design of low-threshold photonic-crystal surface-emitting lasers with confined gain regions by using selective area intermixing.

Project description:Photonic-crystal surface-emitting lasers have many promising properties over traditional semiconductor lasers and are regarded as the next-generation laser sources. However, the minimum achievable lasing threshold of PCSELs is still several times larger than that of VCSELs, and limiting its applications especially if the required power is small. Here, we propose a new design that reduces the gain region in the lateral plane by using selective quantum-well intermixing to reduce the threshold current of PCSELs. By performing theoretical calculations, we confirmed that the threshold current can be lowered by a factor of two to three while keeping the PCSEL's advantage of small divergence angle.

| S-EPMC10616058 | biostudies-literature

Vector cavity solitons in broad area Vertical-Cavity Surface-Emitting Lasers.

Project description:We report the experimental observation of two-dimensional vector cavity solitons in a Vertical-Cavity Surface-Emitting Laser (VCSEL) under linearly polarized optical injection when varying optical injection linear polarization direction. The polarization of the cavity soliton is not the one of the optical injection as it acquires a distinct ellipticity. These experimental results are qualitatively reproduced by the spin-flip VCSEL model. Our findings open the road to polarization multiplexing when using cavity solitons in broad-area lasers as pixels in information technology.

| S-EPMC4742781 | biostudies-other

Generation of stochastic electromagnetic beams based on modified degenerate cavity lasers.

Project description:This study introduces a technique for generating stochastic electromagnetic (SEM) beams using a modified degenerate cavity laser in which one mirror is substituted with a spatial light modulator (SLM). We propose two methods to manipulate the spatial coherence of SEM beams: the first involves adjusting the size of a spatial filter within the laser cavity, which alters the number of oscillating transverse modes and thus varies the spatial coherence. The second method employs phase modulation by applying a dynamic random phase to the SLM. This dual approach allows for precise control over the spatial coherence properties of SEM beams. Experimental results demonstrate the generation of SEM beams using an SLM within a modified degenerate cavity laser and reveal a correlation between two orthogonal polarization components of the beams.

| S-EPMC11319665 | biostudies-literature

Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements.

Project description:Combining semiconductor optical amplifiers (SOA) on direct-bandgap III-V substrates with low-loss silicon or silicon-nitride photonic integrated circuits (PIC) has been key to chip-scale external-cavity lasers (ECL) that offer wideband tunability along with small optical linewidths. However, fabrication of such devices still relies on technologically demanding monolithic integration of heterogeneous material systems or requires costly high-precision package-level assembly, often based on active alignment, to achieve low-loss coupling between the SOA and the external feedback circuits. In this paper, we demonstrate a novel class of hybrid ECL that overcome these limitations by exploiting 3D-printed photonic wire bonds as intra-cavity coupling elements. Photonic wire bonds can be written in-situ in a fully automated process with shapes adapted to the mode-field sizes and the positions of the chips at both ends, thereby providing low-loss coupling even in presence of limited placement accuracy. In a proof-of-concept experiment, we use an InP-based reflective SOA (RSOA) along with a silicon photonic external feedback circuit and demonstrate a single-mode tuning range from 1515 to 1565 nm along with side mode suppression ratios above 40 dB and intrinsic linewidths down to 105 kHz. Our approach combines the scalability advantages of monolithic integration with the performance and flexibility of hybrid multi-chip assemblies and may thus open a path towards integrated ECL on a wide variety of integration platforms.

| S-EPMC8361180 | biostudies-literature

Ultrasensitive nonlinear absorption response of large-size topological insulator and application in low-threshold bulk pulsed lasers.

Project description:Dirac-like topological insulators have attracted strong interest in optoelectronic application because of their unusual and startling properties. Here we report for the first time that the pure topological insulator Bi2Te3 exhibited a naturally ultrasensitive nonlinear absorption response to photoexcitation. The Bi2Te3 sheets with lateral size up to a few micrometers showed extremely low saturation absorption intensities of only 1.1 W/cm(2) at 1.0 and 1.3 μm, respectively. Benefiting from this sensitive response, a Q-switching pulsed laser was achieved in a 1.0 μm Nd:YVO4 laser where the threshold absorbed pump power was only 31 mW. This is the lowest threshold in Q-switched solid-state bulk lasers to the best of our knowledge. A pulse duration of 97 ns was observed with an average power of 26.1 mW. A Q-switched laser at 1.3 μm was also realized with a pulse duration as short as 93 ns. Moreover, the mode locking operation was demonstrated. These results strongly exhibit that Bi2Te3 is a promising optical device for constructing broadband, miniature and integrated high-energy pulsed laser systems with low power consumption. Our work clearly points out a significantly potential avenue for the development of two-dimensional-material-based broadband ultrasensitive photodetector and other optoelectronic devices.

| S-EPMC4595639 | biostudies-other

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data