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Vacuum-Deposited Cesium Tin Iodide Thin Films with Tunable Thermoelectric Properties.


ABSTRACT: Most current thermoelectric materials have important drawbacks, such as toxicity, scarceness, and peak operating temperatures above 300 °C. Herein, we report the thermoelectric properties of different crystalline phases of Sn-based perovskite thin films. The 2D phase, Cs2SnI4, is obtained through vacuum thermal deposition and easily converted into the black β phase of CsSnI3 (B-β CsSnI3) by annealing at 150 °C. B-β CsSnI3 is a p-type semiconductor with a figure of merit (ZT) ranging from 0.021 to 0.033 for temperatures below 100 °C, which makes it a promising candidate to power small electronic devices such as wearable sensors which may be interconnected in the so-called Internet of Things. The B-β phase is stable in nitrogen, whereas it spontaneously oxidizes to Cs2SnI6 upon exposure to air. Cs2SnI6 shows a negative Seebeck coefficient and an ultralow thermal conductivity. However, the ZT values are 1 order of magnitude lower than for B-β CsSnI3 due to a considerably lower electrical conductivity.

SUBMITTER: Sebastia-Luna P 

PROVIDER: S-EPMC9400028 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature

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Vacuum-Deposited Cesium Tin Iodide Thin Films with Tunable Thermoelectric Properties.

Sebastia-Luna Paz P   Pokharel Unnati U   Huisman Bas A H BAH   Koster L Jan Anton LJA   Palazon Francisco F   Bolink Henk J HJ  

ACS applied energy materials 20220726 8


Most current thermoelectric materials have important drawbacks, such as toxicity, scarceness, and peak operating temperatures above 300 °C. Herein, we report the thermoelectric properties of different crystalline phases of Sn-based perovskite thin films. The 2D phase, Cs<sub>2</sub>SnI<sub>4</sub>, is obtained through vacuum thermal deposition and easily converted into the black β phase of CsSnI<sub>3</sub> (B-β CsSnI<sub>3</sub>) by annealing at 150 °C. B-β CsSnI<sub>3</sub> is a p-type semicon  ...[more]

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