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Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer.

ABSTRACT: We report the epitaxial growth of (2̅01)-oriented β-Ga₂O₃ thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial β-Ga₂O₃ thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Post-annealing improves the crystalline quality of β-Ga₂O₃ thin films. High-resolution X-ray diffraction analyses reveal that the epitaxial (2̅01) β-Ga₂O₃ thin films on Si have eight in-plane domain variants to accommodate the large difference in the crystal structure between monoclinic β-Ga₂O₃ and cubic YSZ. The results provide a pathway to integrate epitaxial β-Ga₂O₃ thin films on a Si gold standard substrate, which will expand the application scope beyond high-power electronics.

SUBMITTER: Choi HJ

PROVIDER: S-EPMC9730745 | biostudies-literature | 2022 Dec

REPOSITORIES: biostudies-literature

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Epitaxial Growth of β-Ga2O3 Thin Films on Si with YSZ Buffer Layer.

Choi Hyung-Jin HJ Lee Jun Young JY Jung Soo Young SY Ning Ruiguang R Kim Min-Seok MS Jung Sung-Jin SJ Won Sung Ok SO Baek Seung-Hyub SH Jang Ji-Soo JS

ACS omega 20221124 48

We report the epitaxial growth of (2̅01)-oriented β-Ga2O3 thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial β-Ga2O3 thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Post-annealing improves the crystalline quality of β-Ga2O3</s ...[more]

PMID: 36506186

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