Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser.

ABSTRACT: High pulse repetition rate (≥ 10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ∼2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.

SUBMITTER: Zhang ZY

PROVIDER: S-EPMC3384963 | biostudies-other | 2012

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode.

Project description:We proposed a precise calibration process of Al 0.9Ga0.1As/GaAs DBR micropillar cavity to match the single InAs/GaAs quantum dot (QD) exciton emission and achieve cavity mode resonance and a great enhancement of QD photoluminescence (PL) intensity. Light-matter interaction of single QD in DBR micropillar cavity (Q ? 3800) under weak coupling regime was investigated by temperature-tuned PL spectra; a pronounced enhancement (14.6-fold) of QD exciton emission was observed on resonance. The second-order autocorrelation measurement shows g(2)(0)=0.070, and the estimated net count rate before the first objective lens reaches 1.6×107 counts/s under continuous wave excitation, indicating highly pure single-photon emission at high count rates.

| S-EPMC7347735 | biostudies-literature

Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation.

Project description:Self-assembled quantum dots grown by molecular beam epitaxy have been a hotbed for various fundamental research and device applications over the past decades. Among them, InAs/GaAs quantum dots have shown great potential for applications in quantum information, quantum computing, infrared photodetection, etc. Though intensively studied, some of the optical nonlinear properties of InAs/GaAs quantum dots, specifically the associated two-photon absorption of the wetting and barrier layers, have not been investigated yet. Here we report a study of the photoluminescence of these dots by using direct two-photon excitation. The quadratic power law dependence of the photoluminescence intensity, together with the ground-state resonant peak of quantum dots appearing in the photoluminescence excitation spectrum, unambiguously confirms the occurrence of the direct two-photon absorption in the dots. A three-level rate equation model is proposed to describe the photogenerated carrier dynamics in the quantum dot-wetting layer-GaAs system. Moreover, higher-order power law dependence of photoluminescence intensity is observed on both the GaAs substrate and the wetting layer by two-photon excitation, which is accounted for by a model involving the third-harmonic generation at the sample interface. Our results open a door for understanding the optical nonlinear effects associated with this fundamentally and technologically important platform.

| S-EPMC7331710 | biostudies-literature

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation.

Project description:Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. However, the single-dot occupancy per hole is often made difficult by the fact that lithographically-defined holes are generally much larger than the dots, thus providing several nucleation sites per hole. In addition, deposition of a thin GaAs buffer before the dots tends to further widen the holes in the [110] direction. We have explored a method of native surface oxide removal by using indium beams, which effectively prevents hole elongation along [110] and greatly helps single-dot occupancy per hole. Furthermore, as compared to Ga-assisted deoxidation, In-assisted deoxidation is efficient in completely removing surface contaminants, and any excess In can be easily re-desorbed thermally, thus leaving a clean, smooth GaAs surface. Low temperature photoluminescence showed that inhomogeneous broadening is substantially reduced for QDs grown on In-deoxidized patterns, with respect to planar self-assembled dots.

| S-EPMC5456728 | biostudies-other

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate.

Project description:In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.

| S-EPMC8067461 | biostudies-literature

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate.

Project description:This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n⁺-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n⁺-Si and pin-GaAs/GaAs without QDs. The results reveal the clear contribution of the QDs layers to the improvement of the spectral response up to 1200 nm. The novel structure has been studied by X ray diffraction (XRD), photoluminescence spectroscopy (PL) and transmission electron microscopy (TEM). These results provide considerable insights into low cost III-V material-based solar cells.

| S-EPMC5455635 | biostudies-other

Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.

Project description:We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The obtained g((2))(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 μm single-photon source based on semiconductor materials.

| S-EPMC3887382 | biostudies-literature

Self-Catalyzed InSb/InAs Quantum Dot Nanowires.

Project description:The nanowire platform offers great opportunities for improving the quality and range of applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by chemical beam epitaxy. A systematic variation of the growth parameters for the InAs top segment has been investigated and the resulting nanowire morphology analyzed. We found that the growth temperature strongly influences the axial and radial growth rates of the top InAs segment. As a consequence, we can reduce the InAs shell thickness around the InSb quantum dot by increasing the InAs growth temperature. Moreover, we observed that both axial and radial growth rates are enhanced by the As line pressure as long as the In droplet on the top of the nanowire is preserved. Finally, the time evolution of the diameter along the entire length of the nanowires allowed us to understand that there are two In diffusion paths contributing to the radial InAs growth and that the interplay of these two mechanisms together with the total length of the nanowires determine the final shape of the nanowires. This study provides insights in understanding the growth mechanisms of self-catalyzed InSb/InAs quantum dot nanowires, and our results can be extended also to the growth of other self-catalyzed heterostructured nanowires, providing useful guidelines for the realization of quantum structures with the desired morphology and properties.

| S-EPMC7828319 | biostudies-literature

Ultra-fast optical ranging using quantum-dash mode-locked laser diodes.

Project description:Laser-based light detection and ranging (LiDAR) is key to many applications in science and industry. For many use cases, compactness and power efficiency are key, especially in high-volume applications such as industrial sensing, navigation of autonomous objects, or digitization of 3D scenes using hand-held devices. In this context, comb-based ranging systems are of particular interest, combining high accuracy with high measurement speed. However, the technical complexity of miniaturized comb sources is still prohibitive for many applications, in particular when high optical output powers and high efficiency are required. Here we show that quantum-dash mode-locked laser diodes (QD-MLLD) offer a particularly attractive route towards high-performance chip-scale ranging systems. QD-MLLDs are compact, can be easily operated by a simple DC drive current, and provide spectrally flat frequency combs with bandwidths in excess of 2 THz, thus lending themselves to coherent dual-comb ranging. In our experiments, we show measurement rates of up to 500 MHz-the highest rate demonstrated with any ranging system so far. We attain reliable measurement results with optical return powers of only - 40 dBm, corresponding to a total loss of 49 dB in the ranging path, which corresponds to the highest loss tolerance demonstrated so far for dual-comb ranging with chip-scale comb sources. Combing QD-MLLDs with advanced silicon photonic receivers offers an attractive route towards robust and technically simple chip-scale LiDAR systems.

| S-EPMC8776879 | biostudies-literature

Low-noise GaAs quantum dots for quantum photonics.

Project description:Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons-bandwidth-matched to an atomic quantum-memory-and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an n-i-p-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum.

| S-EPMC7506537 | biostudies-literature

Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.

Project description:This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical transition energies have been calculated by solving the three dimensional Schrödinger equation using the finite element methods and taking into account the strain induced by the lattice mismatch. We have considered a lens shaped InAs QDs in a pure GaAs matrix and either with InGaAs strain reducing cap layer or underlying layer. The correlation between numerical calculation and PL measurements allowed us to track the mean buried QDs size evolution with respect to the surrounding matrix composition. The simulations reveal that the buried QDs' realistic size is less than that experimentally driven from atomic force microscopy observation. Furthermore, the average size is found to be slightly increased for InGaAs capped QDs and dramatically decreased for QDs with InGaAs under layer.

| S-EPMC5455476 | biostudies-other

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data