Browse
Submit Data
Databases
API
Help

Dataset Information

21 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Bi-stable resistive switching characteristics in Ti-doped ZnO thin films.

ABSTRACT: Ti-doped ZnO (ZnO/Ti) thin films were grown on indium tin oxide substrates by a facile electrodeposition route. The morphology, crystal structure and resistive switching properties were examined, respectively. The morphology reveals that grains are composed of small crystals. The (002) preferential growth along c-axis of ZnO/Ti could be observed from structural analysis. The XPS study shows the presence of oxygen vacancies in the prepared films. Typical bipolar and reversible resistance switching effects were observed. High ROFF/RON ratios (approximately 14) and low operation voltages within 100 switching cycles are obtained. The filament theory and the interface effect are suggested to be responsible for the resistive switching phenomenon.

SUBMITTER: Younis A

PROVIDER: S-EPMC3623890 | biostudies-other | 2013

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Publications

Bi-stable resistive switching characteristics in Ti-doped ZnO thin films.

Younis Adnan A Chu Dewei D Li Sean S

Nanoscale research letters 20130404 1

Ti-doped ZnO (ZnO/Ti) thin films were grown on indium tin oxide substrates by a facile electrodeposition route. The morphology, crystal structure and resistive switching properties were examined, respectively. The morphology reveals that grains are composed of small crystals. The (002) preferential growth along c-axis of ZnO/Ti could be observed from structural analysis. The XPS study shows the presence of oxygen vacancies in the prepared films. Typical bipolar and reversible resistance switchin ...[more]

PMID: 23557254

Similar Datasets

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.

Project description:A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

| S-EPMC6515171 | biostudies-literature

Resistive switching studies in VO<sub>2</sub> thin films.

Project description:The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.

| S-EPMC7040009 | biostudies-literature

Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio.

Project description:A metal-insulator-metal structure resistive switching device based on H0.5Z0.5O₂ (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable and reproducible unipolar resistive switching (RS) behaviors with an extremely high OFF/ON ratio over 5400. The retention property had no degradation at 6 × 10⁴ s. The current-voltage characteristics of the HZO samples showed a Schottky emission conduction in the high voltage region (Vreset < V < Vset), while at the low voltage region (V < Vreset), the ohmic contact and space charge limited conduction (SCLC) are suggested to be responsible for the low and high resistance states, respectively. Combined with the conductance mechanism, the RS behaviors are attributed to joule heating and redox reactions in the HZO thin film induced by the external electron injection.

| S-EPMC5503322 | biostudies-other

Resistive Switching Characteristics of HfO<sub>2</sub> Thin Films on Mica Substrates Prepared by Sol-Gel Process.

Project description:The resistive switching (RS) characteristics of flexible films deposited on mica substrates have rarely been reported upon, especially flexible HfO2 films. A novel flexible Au/HfO2/Pt/mica resistive random access memory device was prepared by a sol-gel process, and a Au/HfO2/Pt/Ti/SiO2/Si (100) device was also prepared for comparison. The HfO2 thin films were grown into the monoclinic phase by the proper annealing process at 700 °C, demonstrated by grazing-incidence X-ray diffraction patterns. The ratio of high/low resistance (off/on) reached 1000 and 50 for the two devices, respectively, being relatively stable for the former but not for the latter. The great difference in ratios for the two devices may have been caused by different concentrations of the oxygen defect obtained by the X-ray photoelectron spectroscopy spectra indicating composition and chemical state of the HfO2 thin films. The conduction mechanism was dominated by Ohm's law in the low resistance state, while in high resistance state, Ohmic conduction, space charge limited conduction (SCLC), and trap-filled SCLC conducted together.

| S-EPMC6723579 | biostudies-literature

The thermoelectric properties of Au nanoparticle-incorporated Al-doped mesoporous ZnO thin films.

Project description:Mesoporous Al-doped ZnO thin films incorporated with gold nanoparticles (Au NPs) were synthesized using a sol-gel and evaporation-induced self-assembly process. In this study, the complementary effects of Au NP incorporation and Al doping on the thermoelectric properties of mesoporous ZnO thin films were analysed. The incorporated Au NPs induced an increase in electrical conductivity but a detriment in the pore arrangement of the mesoporous ZnO thin film, which was accompanied by a decrease in porosity. However, the addition of the Al dopant minimized the pore structural collapse because of the inhibition of the grain growth in the ZnO skeletal structure, resulting in the enhancement of the pore arrangement and porosity. When the Au NPs and Al dopant were added at the same time, the degradation in the pore structure was minimized and the electrical conductivity was effectively increased, but the absolute value of the Seebeck coefficient was decreased. However, as a result, the thermoelectric power factor was increased by 2.4 times compared to that of the pristine mesoporous ZnO thin film. It was found that co-introducing the Au NPs and Al doping to the mesoporous ZnO structure was effective in preserving the pore structure and increasing the electric conductivity, thereby enhancing the thermoelectric property of the mesoporous ZnO thin film.

| S-EPMC6549978 | biostudies-literature

Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity.

Project description:Leakage of current in oxide layers is the main issue for higher speed and denser resistive random-access memory. Defect engineering played a substantial role in meeting this challenge by doping or producing controlled interstitial defects or active sites. These controlled active sites enabled memory cells to form a stable and reproducible conduction filament following an electrochemical metallization model. In this study, a defect-abundant lime peel extract (LPE)-mediated anatase TiO2 thin film was fabricated using a simple hydrothermal route. The detailed structural and morphological analysis of the bioactive anatase TiO2-LPE thin film reveals the homogeneous growth of TiO2 flowers and distinct features in terms of controlled defects as compared to simple anatase TiO2. These interstitial defects (Ti+3 and Ti+4) behave as active sites for cation migrations along highly conductive K1+ ions because of the mediation of LPE. The defect-free surface reveals slight surface roughness (4.8 nm) that successfully minimizes leakage of current. The strategy enabled a reliable conductive bridge filament, which can replicate with no more electric degradation. The Ag/TiO2-LPE/FTO-based memory cell demonstrates reproducible bipolar resistive switching along with a high ON/OFF ratio (>105), excellent endurance (1.5 × 103 cycles), and long-term retention (105 s) without any electrical degradation. Furthermore, green-synthesized TiO2-LPE nanoparticles have shown superior antibacterial activity as compared to other green syntheses of different plants or fruits against the toxic microorganisms present in inorganic media.

| S-EPMC7408193 | biostudies-literature

Optical, Structural, and Crystal Defects Characterizations of Dip Synthesized (Fe-Ni) Co-Doped ZnO Thin Films.

Project description:Sol-gel technique is used to synthesize as-grown zinc oxide (ZnO) and iron-nickel (Fe-Ni) co-doped ZnO thin films deposited on glass substrates using dip coating technique. The structural properties and crystal imperfections of as-prepared thin films are investigated. We performed the structural analysis of films using X-ray diffraction (XRD). The XRD analysis reveal that the as-prepared films exhibit wurtzite structure. Furthermore, XRD-line profile analysis is performed to study the correlation between structural properties and imperfections of the nanocomposite thin films. The crystallite size and microstrains parameters are predicted using the Williamson-Hall method. We found that the crystallites size increases as the co-doped (Fe-Ni) concentration is increased. However, microstrains of the nanocomposite films decreases as (Fe-Ni) concentration is increased. The optical properties of the (Fe-Ni) co-doped nanocomposite films are investigated by performing UV-Vis (250 nm-700 nm) spectrophotometer measurements. We found that as the (Fe-Ni) concentration level is steadily increased, transmittance of the undoped ZnO thin films is decreased. Remarkably, refractive index of undoped ZnO thin films is found to exhibit values extending from 1.55 to1.88 that would increase as (Fe-Ni) concentration is increased.

| S-EPMC7178700 | biostudies-literature

Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes.

Project description:BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused Ti effectively traps and releases oxygen vacancies and consequently stabilizes the resistive switching in BiFeO3 MIM structures. Therefore, using Ti implantation of the bottom electrode, the retention performance can be greatly improved with increasing Ti fluence. For the used raster-scanned Ti implantation the lateral Ti distribution is not homogeneous enough and endurance slightly degrades with Ti fluence. The local resistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO3 grain size by local Ti implantation of the bottom electrode.

| S-EPMC4686890 | biostudies-other

Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films.

Project description:The discovery of resistance switching memristors marks a paradigm shift in the search for alternative non-volatile memory components in the semiconductor industry. Normally a dielectric in these bistable memory cells changes its resistance with an applied electric field or current, albeit retaining the resistive state based on the history of the applied field. Despite showing immense potential, sustainable growth of this new memory technology is bogged down by several factors including cost, intricacies of design, lack of efficient tunability, and issues with scalability and eco-friendliness. Here, we demonstrate a simple arrangement wherein an ethanol-adsorbed ZnO thin film exhibits orders of magnitude change in resistance when activated by visible light. We show that there exists two stable ohmic states, one in the dark and the other in the illuminated regime, as well as a significant delay in the transition between these saturated states. We also demonstrate that visible light acts as a non-invasive tuning parameter for the bistable resistive states. Furthermore, a pinched hysteresis I-V response observed in these devices indicate what seems to be a new type of memristive behaviour.

| S-EPMC5794968 | biostudies-other

Tuning of resistive memory switching in electropolymerized metallopolymeric films.

Project description:A diruthenium complex capped with two triphenylamine units was polymerized by electrochemical oxidation to afford metallopolymeric films with alternating diruthenium and tetraphenylbenzidine structures. The obtained thin films feature rich redox processes associated with the reduction of the bridging ligands (tetra(pyrid-2-yl)pyrazine) and the oxidation of the tetraphenylbenzidine and diruthenium segments. The sandwiched ITO/polymer film/Al electrical devices show excellent resistive memory switching with a low operational voltage, large ON/OFF current ratio (100-1000), good stability (500 cycles tested), and long retention time. In stark contrast, devices with polymeric films of a related monoruthenium complex show poor memory performance. The mechanism of the field-induced conductivity of the diruthenium polymer film is rationalized by the formation of a charge transfer state, as supported by DFT calculations.

| S-EPMC5811141 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data