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Atomically thin nonreciprocal optical isolation.

ABSTRACT: Optical isolators will play a critical role in next-generation photonic circuits, but their on-chip integration requires miniaturization with suitable nonreciprocal photonic materials. Here, we theoretically demonstrate the thinnest possible and polarization-selective nonreciprocal isolation for circularly polarized waves by using graphene monolayer under an external magnetic field. The underlying mechanism is that graphene electron velocity can be largely different for the incident wave propagating in opposite directions at cyclotron frequency, making graphene highly conductive and reflective in one propagation direction while transparent in the opposite propagation direction under an external magnetic field. When some practical loss is introduced, nonreciprocal isolation with graphene monolayer still possesses good performance in a broad bandwidth. Our work shows the first study on the extreme limit of thickness for optical isolation and provides theoretical guidance in future practical applications.

SUBMITTER: Lin X

PROVIDER: S-EPMC3935191 | biostudies-other | 2014

REPOSITORIES: biostudies-other

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Atomically thin optical lenses and gratings.

Project description:Two-dimensional (2D) materials have emerged as promising candidates for miniaturized optoelectronic devices due to their strong inelastic interactions with light. On the other hand, a miniaturized optical system also requires strong elastic light-matter interactions to control the flow of light. Here we report that a single-layer molybdenum disulfide (MoS2) has a giant optical path length (OPL), around one order of magnitude larger than that from a single-layer of graphene. Using such giant OPL to engineer the phase front of optical beams we have demonstrated, to the best of our knowledge, the world's thinnest optical lens consisting of a few layers of MoS2 less than 6.3 nm thick. By taking advantage of the giant elastic scattering efficiency in ultra-thin high-index 2D materials, we also demonstrated high-efficiency gratings based on a single- or few-layers of MoS2. The capability of manipulating the flow of light in 2D materials opens an exciting avenue towards unprecedented miniaturization of optical components and the integration of advanced optical functionalities. More importantly, the unique and large tunability of the refractive index by electric field in layered MoS2 will enable various applications in electrically tunable atomically thin optical components, such as micro-lenses with electrically tunable focal lengths, electrical tunable phase shifters with ultra-high accuracy, which cannot be realized by conventional bulk solids.

| S-EPMC6059897 | biostudies-literature

High-Mobility and High-Optical Quality Atomically Thin WS 2.

Project description:The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS2 leads to superior material quality compared to the widely used direct sulfidization of WO3-based precursors. Record high room temperature charge carrier mobility up to 52 cm2/Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes.

| S-EPMC5668258 | biostudies-literature

Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide.

Project description:We report the first detailed characterization of the sheet third-harmonic optical susceptibility, ?(3)s, of tungsten diselenide (WSe2). With a home-built multiphoton microscope setup developed to study harmonics generation, we map the second and third-harmonic intensities as a function of position in the sample, pump power and polarization angle, for single- and few-layers flakes of WSe2. We register a value of |?(3)s|?? 0.9?×?10-28?m3 V-2 at a fundamental excitation frequency of ???=?0.8?eV, which is comparable in magnitude to the third-harmonic susceptibility of other group-VI transition metal dichalcogenides. The simultaneously recorded sheet second-harmonic susceptibility is found to be |?(2)s| ? 0.7 × 10-19?m2?V-1 in very good agreement on the order of magnitude with recent reports for WSe2, which asserts the robustness of our values for |?(3)s|.

| S-EPMC6030073 | biostudies-literature

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides.

Project description:We report systematic optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at multilayers to a direct-gap one at monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness independent splitting pattern is a direct consequence of the giant spin-valley coupling which fully suppresses interlayer hopping at valence band edge near K points because of the sign change of the spin-valley coupling from layer to layer in the 2H stacking order.

| S-EPMC3622914 | biostudies-literature

Selectively tunable optical Stark effect of anisotropic excitons in atomically thin ReS2.

Project description:The optical Stark effect is a coherent light-matter interaction describing the modification of quantum states by non-resonant light illumination in atoms, solids and nanostructures. Researchers have strived to utilize this effect to control exciton states, aiming to realize ultra-high-speed optical switches and modulators. However, most studies have focused on the optical Stark effect of only the lowest exciton state due to lack of energy selectivity, resulting in low degree-of-freedom devices. Here, by applying a linearly polarized laser pulse to few-layer ReS2, where reduced symmetry leads to strong in-plane anisotropy of excitons, we control the optical Stark shift of two energetically separated exciton states. Especially, we selectively tune the Stark effect of an individual state with varying light polarization. This is possible because each state has a completely distinct dependence on light polarization due to different excitonic transition dipole moments. Our finding provides a methodology for energy-selective control of exciton states.

| S-EPMC5120211 | biostudies-literature

Neuromorphic Electro-Stimulation Based on Atomically Thin Semiconductor for Damage-Free Inflammation Inhibition

Project description:Inflammation, caused by accumulation of inflammatory cytokines from immunocytes, is prevalent in a variety of diseases. Electro-stimulation emerges as a promising candidate for inflammatory inhibition. Although electroacupuncture is free from surgical injury, it faces the challenges of imprecise pathways/current spikes, and insufficiently defined mechanisms, while non-optimal pathway or spike would require high current amplitude, which makes electro-stimulation usually accompanied by damage and complications. Here, we propose a neuromorphic electro-stimulation based on atomically thin semiconductor floating-gate memory interdigital circuit. Direct stimulation is achieved by wrapping sympathetic chain with flexible electrodes and floating-gate memory are programmable to fire bionic spikes, thus minimizing nerve damage. A substantial decrease (73.5%) in inflammatory cytokine IL-6 occurred, which also enabled better efficacy than commercial stimulator at record-low currents with damage-free to sympathetic neurons. Additionally, using transgenic mice, the anti-inflammation effect is determined by β2 adrenergic signaling from myeloid cell lineage (monocytes/macrophages and granulocytes).

2024-01-20 | GSE253300 | GEO

Revealing local structural properties of an atomically thin MoSe2 surface using optical microscopy.

Project description:Using a triangular molybdenum diselenide (MoSe2) flake as surface-enhanced Raman spectroscopy (SERS) platform, we demonstrate the dependency of the Raman enhancement on laser beam polarization and local structure using copper phthalocyanine (CuPc) as probe. Second harmonic generation (SHG) and photoluminescence spectroscopy and microscopy are used to reveal the structural irregularities of the MoSe2 flake. The Raman enhancement in the focus of an azimuthally polarized beam, which possesses exclusively an in-plane electric field component is stronger than the enhancement by a focused radially polarized beam, where the out-of-plane electric field component dominates. This phenomenon indicates that the face-on oriented CuPc molecules strongly interact with the MoSe2 flake via charge transfer and dipole-dipole interaction. Furthermore, the Raman scattering maps on the irregular MoSe2 surface show a distinct correlation with the SHG and photoluminescence optical images, indicating the relationship between local structure and optical properties of the MoSe2 flake. These results contribute to understand the impacts of local structural properties on the Raman enhancement at the surface of the 2D transition-metal dichalcogenide.

| S-EPMC9263549 | biostudies-literature

Enhanced superconductivity in atomically thin TaS2.

Project description:The ability to exfoliate layered materials down to the single layer limit has presented the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing the dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far.

| S-EPMC5512558 | biostudies-literature

Atomically thin quantum light-emitting diodes.

Project description:Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

| S-EPMC5052681 | biostudies-literature

Atomically thin photoanode of InSe/graphene heterostructure.

Project description:Achieving high-efficiency photoelectrochemical water splitting requires a better understanding of ion kinetics, e.g., diffusion, adsorption and reactions, near the photoelectrode's surface. However, with macroscopic three-dimensional electrodes, it is often difficult to disentangle the contributions of surface effects to the total photocurrent from that of various factors in the bulk. Here, we report a photoanode made from a InSe crystal monolayer that is encapsulated with monolayer graphene to ensure high stability. We choose InSe among other photoresponsive two-dimensional (2D) materials because of its unique properties of high mobility and strongly suppressing electron-hole pair recombination. Using the atomically thin electrodes, we obtained a photocurrent with a density >10 mA cm-2 at 1.23 V versus reversible hydrogen electrode, which is several orders of magnitude greater than other 2D photoelectrodes. In addition to the outstanding characteristics of InSe, we attribute the enhanced photocurrent to the strong coupling between the hydroxide ions and photo-generated holes near the anode surface. As a result, a persistent current even after illumination ceased was also observed due to the presence of ions trapped holes with suppressed electron-hole recombination. Our results provide atomically thin materials as a platform for investigating ion kinetics at the electrode surface and shed light on developing next-generation photoelectrodes with high efficiency.

| S-EPMC7782821 | biostudies-literature

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