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Transistor application of alkyl-substituted picene.


ABSTRACT: Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, ?, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21?cm2 V(-1) s(-1), which is the highest ? value recorded for organic thin-film FETs; the average ? value () evaluated from twelve FET devices was 14(4)?cm2 V(-1) s(-1). The values for picene-(C14H29)2 thin-film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5?cm2 V(-1) s(-1), and the lowest absolute threshold voltage, |Vth|, (5.2?V) was recorded with a PZT gate dielectric; the average |Vth| for PZT gate dielectric is 7(1)?V. The solution-processed picene-(C14H29)2 FET was also fabricated with an SiO2 gate dielectric, yielding ?=3.4×10(-2)?cm2 V(-1) s(-1). These results verify the effectiveness of picene-(C14H29)2 for electronics applications.

SUBMITTER: Okamoto H 

PROVIDER: S-EPMC4031476 | biostudies-other | 2014

REPOSITORIES: biostudies-other

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Transistor application of alkyl-substituted picene.

Okamoto Hideki H   Hamao Shino S   Goto Hidenori H   Sakai Yusuke Y   Izumi Masanari M   Gohda Shin S   Kubozono Yoshihiro Y   Eguchi Ritsuko R  

Scientific reports 20140523


Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V(-1) s(-1), which is the highest μ value recorded for organic thin-film FETs; the average μ value (<μ>) evaluated f  ...[more]

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