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Optical excitation and external photoluminescence quantum efficiency of Eu³⁺ in GaN.


ABSTRACT: We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y₂O₃, we find that the fraction of Eu(3+) ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (~10%) and (~3%) under continuous wave and pulsed excitation, respectively.

SUBMITTER: de Boer WD 

PROVIDER: S-EPMC4050378 | biostudies-other | 2014

REPOSITORIES: biostudies-other

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