Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates.

ABSTRACT: A thin, chemically inert 3C-SiC layer between GaN and Si helps not only to avoid the "melt-back" effect, but also to inhibit the crack generation in the grown GaN layers. The quality of GaN layer is heavily dependent on the unique properties of the available 3C-SiC/Si templates. In this paper, the parameters influencing the roughness, crystalline quality, and wafer bow are investigated and engineered to obtain high quality, low roughness 3C-SiC/Si templates suitable for subsequent GaN growth and device processing. Kinetic surface roughening and SiC growth mechanisms, which depend on both deposition temperature and off-cut angle, are reported for heteroepitaxial growth of 3C-SiC on Si substrates. The narrower terrace width on 4° off-axis Si enhances the step-flow growth at 1200 °C, with the roughness of 3C-SiC remaining constant with increasing thickness, corresponding to a scaling exponent of zero. Crack-free 3C-SiC grown on 150-mm Si substrate with a wafer bow of less than 20 μm was achieved. Both concave and convex wafer bow can be obtained by in situ tuning of the deposited SiC layer thicknesses. The 3C-SiC grown on off-axis Si, compared to that grown on on-axis Si, has lower surface roughness, better crystallinity, and smaller bow magnitude.

SUBMITTER: Wang L

PROVIDER: S-EPMC4614071 | biostudies-other | 2015

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates.

Project description:Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent.

| S-EPMC3880049 | biostudies-other

Epitaxial graphene on cubic SiC(111)Si(111) substrate.

Project description:Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)Si(111) substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples.

| S-EPMC2881931 | biostudies-other

Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer.

Project description:Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm(2) above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers.

| S-EPMC4658498 | biostudies-other

Mesporous 3C-SiC Hollow Fibers.

Project description:In the present work, for the first time, we reported the exploration of mesoporous 3C-SiC hollow fibers via single-spinneret electrospinning of polyureasilazane (PSN) and polyvinylpyrrolidone (PVP) solution followed by high-temperature pyrolysis treatment. The resultant products were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and N2 adsorption. The as-prepared hollow fibers with totally mesoporous walls were uniformly sized in diameter and high purity in morphology. They were composed of single-crystalline 3C-SiC nanoparticles with a surface area of 21.75 m2/g and average pore diameter of ~34 nm. The PSN concentration played a determined role on the formation of hollow fibers rather than the conventional solid counterparts, enabling their growth in a tunable manner. A possible mechanism was proposed for the formation of mesoporous SiC hollow fiber.

| S-EPMC5432512 | biostudies-literature

Atomic Point Contact Raman Spectroscopy of a Si(111)-7 × 7 Surface.

Project description:Tip-enhanced Raman scattering (TERS) has recently demonstrated the exceptional sensitivity to observe vibrational structures on the atomic scale. However, it strongly relies on electromagnetic enhancement in plasmonic nanogaps. Here, we demonstrate that atomic point contact (APC) formation between a plasmonic tip and the surface of a bulk Si sample can lead to a dramatic enhancement of Raman scattering and consequently the phonons of the reconstructed Si(111)-7 × 7 surface can be detected. Furthermore, we demonstrate the chemical sensitivity of APC-TERS by probing local vibrations resulting from Si-O bonds on the partially oxidized Si(111)-7 × 7 surface. This approach will expand the applicability of ultrasensitive TERS, exceeding the previous measurement strategies that exploit intense gap-mode plasmons, typically requiring a plasmonic substrate.

| S-EPMC8288640 | biostudies-literature

Heteroepitaxial Growth of High Optical Quality, Wafer-Scale van der Waals Heterostrucutres.

Project description:Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can be observed for such monolayers although only for materials of sufficient crystalline quality and so far mostly available in the form of micrometer-sized flakes. A further significant improvement of optical and electrical properties can be achieved by transferring the TMD on hexagonal boron nitride (hBN). To exploit the full potential of TMDs in future applications, epitaxial techniques have to be developed that not only allow the growth of large-scale, high-quality TMD monolayers but also allow the growth to be performed directly on large-scale epitaxial hBN. In this work, we address this problem and demonstrate that MoSe2 of high optical quality can be directly grown on epitaxial hBN on an entire 2 in. wafer. We developed a combined growth theme for which hBN is first synthesized at high temperature by metal organic vapor phase epitaxy (MOVPE) and as a second step MoSe2 is deposited on top by molecular beam epitaxy (MBE) at much lower temperatures. We show that this structure exhibits excellent optical properties, manifested by narrow excitonic lines in the photoluminescence spectra. Moreover, the material is homogeneous on the area of the whole 2 in. wafer with only ±0.14 meV deviation of excitonic energy. Our mixed growth technique may guide the way for future large-scale production of high quality TMD/hBN heterostructures.

| S-EPMC8517960 | biostudies-literature

Comparison of Vibration-Assisted Scratch Characteristics of SiC Polytypes (3C-, 4H- and 6H-SiC).

Project description:Single-crystal silicon carbide (SiC) is widely used because of its excellent properties. However, SiC is a typical hard and brittle material, and there are many challenges in realizing its high efficiency and high-precision machining. Grinding is the main method used to achieve the high-efficiency processing of SiC, but the contradiction between processing quality and processing efficiency is prominent. Vibration-assisted grinding is an effective method to realize high-efficiency and precision machining of SiC. To reveal the vibration-assisted grinding mechanism of SiC, the vibration-assisted nano-scratch process is studied using the molecular dynamics method, and the material removal process and damage formation mechanism in the vibration-assisted scratch are analyzed. Aiming at the three main structural crystal types, 3C-, 4H- and 6H-SiC, scratch simulations were carried out. The vibration-assisted scratch characteristics of SiC polytypes were evaluated from the perspectives of scratch force and the amorphous layer. It was found that the effects of vibration-assisted scratch on different crystal structures of SiC differ, and 3C-SiC is quite different from 4H- and 6H-SiC. Through vibration-assisted scratch simulations under different scratch conditions and vibration characteristics, the influence laws for machining parameters and vibration characteristic parameters were explored. It was found that increasing the frequency and amplitude was beneficial for improving the machining effect. This provides a basis for vibration-assisted grinding technology to be used in the high-efficiency precision machining of SiC.

| S-EPMC9030126 | biostudies-literature

Delocalized Surface State in Epitaxial Si(111) Film with Spontaneous √3 × √3 Superstructure.

Project description:The "multilayer silicene" films were grown on Ag(111), with increasing thickness above 30 monolayers (ML). Scanning tunneling microscopy (STM) observations suggest that the "multilayer silicene" is indeed a bulk-like Si(111) film with a (√3 × √3)R30° honeycomb superstructure on surface. The possibility for formation of Si(111)(√3 × √3)R30°-Ag reconstruction on the surface can be distinctively ruled out by peeling off the surface layer with the STM tip. On this surface, delocalized surface state as well as linear energy-momentum dispersion was observed from quasiparticle interference patterns. Our results indicate that a bulklike silicon film with diamondlike structure can also host delocalized surface state, which is even more attractive for potential applications, such as new generation of nanodevices based on Si.

| S-EPMC4551997 | biostudies-literature

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications.

Project description:This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000?°C and 1300?°C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages of growing the 3C-SiC polytype on large diameter silicon wafers, its stability after high temperature processing is an important consideration. Yet recently, this has been thrown into question by claims that the heterojunction suffers catastrophic degradation at temperatures above 1000?°C. Here we present results showing that the heterojunction maintains excellent diode characteristics following heat treatment up to 1100?°C and while some changes were observed between 1100?°C and 1300?°C, diodes maintained their rectifying characteristics, enabling compatibility with a large range of device fabrication. The parameters of as-grown diodes were J0?=?1?×?10-11?A/mm2, n?=?1.02, and +/-2V rectification ratio of 9?×?106. Capacitance and thermal current-voltage analysis was used to characterize the excess current leakage mechanism. The change in diode characteristics depends on diode area, with larger areas (1?mm2) having reduced rectification ratio while smaller areas (0.04?mm2) maintained excellent characteristics of J0?=?2?×?10-10?A/mm2, n?=?1.28, and +/-2V ratio of 3?×?106. This points to localized defect regions degrading after heat treatment rather than a fundamental issue of the heterojunction.

| S-EPMC5735178 | biostudies-literature

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate.

Project description:This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/Si interface, from reaching the surface. We investigated the effect of the size of the inverted pyramid on the epilayer quality. We noted that anti-phase boundaries (APBs) develop between adjacent faces of the pyramid and that the SiC/Si interfaces have the same polarity on both pyramid faces. The structure of the heterointerface was investigated. Moreover, due to the emergence of APB at the vertex of the pyramid, voids buried on the epilayer form. We demonstrated that careful control of the growth parameters allows modification of the height of the void and the density of APBs, improving SiC epitaxy quality.

| S-EPMC6829442 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data