Unknown

Dataset Information

0

Sub-10 nm feature chromium photomasks for contact lithography patterning of square metal ring arrays.


ABSTRACT: Advances in photolithographic processes have allowed semiconductor industries to manufacture smaller and denser chips. As the feature size of integrated circuits becomes smaller, there has been a growing need for a photomask embedded with ever narrower patterns. However, it is challenging for electron beam lithography to obtain <10 nm linewidths with wafer scale uniformity and a necessary speed. Here, we introduce a photolithography-based, cost-effective mask fabrication method based on atomic layer deposition and overhang structures for sacrificial layers. Using this method, we obtained sub-10 nm square ring arrays of side length 50 μm, and periodicity 100 μm on chromium film, on 1 cm by 1 cm quartz substrate. These patterns were then used as a contact-lithography photomask using 365 nm I-line, to generate metal ring arrays on silicon substrate.

SUBMITTER: Park W 

PROVIDER: S-EPMC4812291 | biostudies-other | 2016 Mar

REPOSITORIES: biostudies-other

Similar Datasets

| S-EPMC3475159 | biostudies-literature
| S-EPMC4050269 | biostudies-literature
| S-EPMC8717533 | biostudies-literature
| S-EPMC10226181 | biostudies-literature
| S-EPMC9501915 | biostudies-literature
| S-EPMC9245127 | biostudies-literature
| S-EPMC5746844 | biostudies-literature
| S-EPMC3240963 | biostudies-literature
| S-EPMC8580043 | biostudies-literature
| S-EPMC9655199 | biostudies-literature