Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering.

ABSTRACT: We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-off current ratio of 10⁵, subthreshold swing of 0.8 V/decade, and mobility of 5 cm²/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 10⁵ at a gate bias of -5 V under 290 nm illumination.

SUBMITTER: Li JY

PROVIDER: S-EPMC5459180 | biostudies-other | 2017 Feb

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Application-Specific Oxide-Based and Metal-Dielectric Thin-Film Materials Prepared by Radio Frequency Magnetron Sputtering.

Project description:We report on the development of several different thin-film functional material systems prepared by radio frequency (RF) magnetron sputtering at Edith Cowan University nanofabrication labs. While focusing on the RF sputtering process optimizations for new or the previously underexplored material compositions and multilayer structures, we disclose several unforeseen material properties and behaviours. Among these are an unconventional magnetic hysteresis loop with an intermediate saturation state observed in garnet trilayers, and an ultrasensitive magnetic switching behaviour in garnet-oxide composites (GOC). We also report on the unusually high thermal exposure stability observed in some nanoengineered metal-dielectric multilayers. We communicate research results related to the design, prototyping, and practical fabrication of high-performance magneto-optic (MO) materials, oxide-based sensor components, and heat regulation coatings for advanced construction and solar windows.

| S-EPMC6829262 | biostudies-literature

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

Project description:Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

| S-EPMC4148649 | biostudies-other

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

Project description:We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

| S-EPMC4935987 | biostudies-literature

Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications.

Project description:In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation &immersion (E &I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm(2)) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance.

| S-EPMC4668551 | biostudies-literature

High-responsivity UV-Vis Photodetector Based on Transferable WS2 Film Deposited by Magnetron Sputtering.

Project description:The two-dimensional layered semiconducting tungsten disulfide (WS2) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS2 films with tens-of-nanometers thickness through magnetron sputtering and post annealing process. The produced WS2 films with low resistance (4.2 kΩ) are used to fabricate broadband sensitive photodetectors in the ultraviolet to visible region. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 53.3 A/W and a high detectivity of 1.22 × 10(11) Jones at 365 nm. The strategy reported paves new way towards the large scale growth of transferable high quality, uniform WS2 films for various important applications including high performance photodetectors, solar cell, photoelectrochemical cell and so on.

| S-EPMC4731746 | biostudies-other

Atomically Thin Amorphous Indium-Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors.

Project description:High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. In this study, we demonstrate atomically thin indium-oxide (InOx) semiconductors using a solution process for high-performance thin-film transistors (TFTs). To achieve superior field-effect mobility and switching characteristics in TFTs, the bandgap and thickness of the InOx were tuned by controlling the InOx solution molarity. As a result, a high field-effect mobility and on/off-current ratio of 13.95 cm2 V-1 s-1 and 1.42 × 1010, respectively, were achieved using 3.12-nanometer-thick InOx. Our results showed that the charge transport of optimized InOx with a thickness of 3.12 nm is dominated by percolation conduction due to its low surface roughness and appropriate carrier concentration. Furthermore, the atomically thin InOx TFTs showed superior positive and negative gate bias stress stabilities, which are important in electronic applications. The proposed oxide TFTs could provide an effective means of the fabrication of scalable, high-throughput, and high-performance transistors for next-generation electronic applications.

| S-EPMC10536517 | biostudies-literature

High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature.

Project description:Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.

| S-EPMC4846996 | biostudies-literature

Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering.

Project description:In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room temperature. The influence of the Ga content on the film's optoelectronic properties as well as the film's electrical stability were investigated. The results showed that the film's crystallinity degraded with increasing Ga content. The film's conductivity was first enhanced due to the replacement of Zn2+ by Ga3+ before decreasing due to the separation of neutralized gallium atoms from the ZnO lattice. When the Ga content increased to 15.52 at %, the film's conductivity improved again. Furthermore, all films presented an average transmittance exceeding 80% in the visible region. Regarding the film's electrical stability, GZO thermally treated below 200 °C exhibited no significant deterioration in electrical properties, but such treatment over 200 °C greatly reduced the film's conductivity. In normal atmospheric conditions, the conductivity of GZO films remained very stable at ambient temperature for more than 240 days.

| S-EPMC5457010 | biostudies-other

Fluorocarbon Thin Films Fabricated using Carbon Nanotube/Polytetrafluoroethylene Composite Polymer Targets via Mid-Frequency Sputtering.

Project description:Carbon nanotube/polytetrafluoroethylene composite polymer targets are proposed for use in the fabrication of fluorocarbon thin films using the mid-frequency sputtering process. Fluorocarbon thin films deposited using carbon nanotube/polytetrafluoroethylene composite targets exhibit an amorphous phase with a smooth surface and show a high water contact angle, optical transmittance, and surface hardness. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy studies reveal that as the carbon nanotube concentration increased in the composite target, a carbon cross-linked structure was formed, which enhanced the film hardness and the modulus of the fluorocarbon thin film. Large-area fluorocarbon thin films with a substrate width of 700 mm were successfully fabricated by a pilot-scale roll-to-roll sputtering system using a carbon nanotube/polytetrafluoroethylene composite target.

| S-EPMC5431166 | biostudies-literature

Effect of Silver Dopants on the ZnO Thin Films Prepared by a Radio Frequency Magnetron Co-Sputtering System.

Project description:Ag-ZnO co-sputtered films at various atomic ratios of Ag (Ag/(Ag + Zn) at.%) were prepared by a radio frequency magnetron cosputtering system, using the co-sputtered targets of Ag and ZnO. The activation of the Ag acceptors (AgZn) and the formation of the Ag aggregations (Ag⁰) in the ZnO matrix were investigated from XRD, Raman scattering, and XPS measurements. The Ag-ZnO co-sputtered film behaving like a p-type conduction was achievable after annealing at 350 °C under air ambient for 1 h.

| S-EPMC5551840 | biostudies-other

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data