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Neuromorphic Electro-Stimulation Based on Atomically Thin Semiconductor for Damage-Free Inflammation Inhibition

ABSTRACT: Neuromorphic Electro-Stimulation Based on Atomically Thin Semiconductor for Damage-Free Inflammation Inhibition

PROVIDER: PRJNA1064997 | ENA |

REPOSITORIES: ENA

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			Action	DRS
	SRR27554707_1.fastq.gz	Fastqsanger.gz
	SRR27554707_2.fastq.gz	Fastqsanger.gz
	SRR27554708_1.fastq.gz	Fastqsanger.gz
	SRR27554708_2.fastq.gz	Fastqsanger.gz
	SRR27554709_1.fastq.gz	Fastqsanger.gz

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Neuromorphic Electro-Stimulation Based on Atomically Thin Semiconductor for Damage-Free Inflammation Inhibition

Project description:Inflammation, caused by accumulation of inflammatory cytokines from immunocytes, is prevalent in a variety of diseases. Electro-stimulation emerges as a promising candidate for inflammatory inhibition. Although electroacupuncture is free from surgical injury, it faces the challenges of imprecise pathways/current spikes, and insufficiently defined mechanisms, while non-optimal pathway or spike would require high current amplitude, which makes electro-stimulation usually accompanied by damage and complications. Here, we propose a neuromorphic electro-stimulation based on atomically thin semiconductor floating-gate memory interdigital circuit. Direct stimulation is achieved by wrapping sympathetic chain with flexible electrodes and floating-gate memory are programmable to fire bionic spikes, thus minimizing nerve damage. A substantial decrease (73.5%) in inflammatory cytokine IL-6 occurred, which also enabled better efficacy than commercial stimulator at record-low currents with damage-free to sympathetic neurons. Additionally, using transgenic mice, the anti-inflammation effect is determined by β2 adrenergic signaling from myeloid cell lineage (monocytes/macrophages and granulocytes).

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