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Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal.

ABSTRACT: Water is composed of two strong electrochemically active agents, H(+) and OH(-) ions, but has not been used as an active electronic material in oxide semiconductors. In this study, we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from insulator to metal. We fabricated a field-effect transistor structure on an oxide semiconductor, SrTiO(3), using water-infiltrated nanoporous glass-amorphous 12CaO·7Al(2)O(3)-as the gate insulator. Positive gate voltage, electron accumulation, water electrolysis and electrochemical reduction occur successively on the SrTiO(3) surface at room temperature. This leads to the formation of a thin (~3?nm) metal layer with an extremely high electron concentration (10(15)-10(16)?cm(-2)), which exhibits exotic thermoelectric behaviour. The electron activity of water as it infiltrates nanoporous glass may find many useful applications in electronics or in energy storage.

SUBMITTER: Ohta H

PROVIDER: S-EPMC3060624 | biostudies-literature | 2010 Nov

REPOSITORIES: biostudies-literature

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Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal.

Ohta Hiromichi H Sato Yukio Y Kato Takeharu T Kim Sungwng S Nomura Kenji K Ikuhara Yuichi Y Hosono Hideo H

Nature communications 20101116

Water is composed of two strong electrochemically active agents, H(+) and OH(-) ions, but has not been used as an active electronic material in oxide semiconductors. In this study, we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from insulator to metal. We fabricated a field-effect transistor structure on an oxide semiconductor, SrTiO(3), using water-infiltrated nanoporous glass-amorphous 12CaO·7Al(2)O(3)-as the gate insulator. Positive gate vo ...[more]

PMID: 21081916

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Project description:We analyze the ferroelectric domain-wall induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks through phase-field simulations by self-consistently solving time-dependent Ginzburg Landau equation, Poisson's equation and semiconductor charge equations. Considering Hf0.5Zr0.5O2 as the ferroelectric material, we study 180° ferroelectric domain formation in MFIM and MFIS stacks and their polarization switching characteristics. Our analysis signifies that the applied voltage-induced polarization switching via soft domain-wall displacement exhibits non-hysteretic characteristics. In addition, the change in domain-wall energy, due to domain-wall displacement, exhibits a long-range interaction and thus, leads to a non-homogeneous effective local negative permittivity in the ferroelectric. Such effects yield an average negative effective permittivity that further provides an enhanced charge response in the MFIM stack, compared to Metal-Insulator-Metal. Furthermore, we show that the domain-wall induced negative effective permittivity is not an intrinsic property of the ferroelectric material and therefore, is dependent on its thickness, the gradient energy coefficient and the in-plane permittivity of the underlying insulator. Similar to the MFIM stack, MFIS stack also exhibits an enhanced charge/capacitance response compared to Metal-Oxide-Semiconductor (MOS) capacitor. Simultaneously, the multi-domain state of the ferroelectric induces non-homogeneous potential in the underlying insulator and semiconductor layer. At low applied voltages, such non-homogeneity leads to the co-existence of electrons and holes in an undoped semiconductor. In addition, we show that with the ferroelectric layer being in the 180° multi-domain state, the minimum potential at the ferroelectric-dielectric interface and hence, the minimum surface potential in the semiconductor, does not exceed the applied voltage (in-spite of the local differential amplification and charge enhancement).

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Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal.

Publications

Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal.

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