Bi2Te3-based applied thermoelectric materials: research advances and new challenges.
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ABSTRACT:
SUBMITTER: Pei J
PROVIDER: S-EPMC8290941 | biostudies-literature | 2020 Dec
REPOSITORIES: biostudies-literature
Publications
Bi<sub>2</sub>Te<sub>3</sub>-based applied thermoelectric materials: research advances and new challenges.
Pei Jun J Cai Bowen B Zhuang Hua-Lu HL Li Jing-Feng JF
National science review 20201017 12
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Project description:This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi₂Te₃) and P-type antimony telluride (Sb₂Te₃), are performed and compared. As a result, highly oriented Bi₂Te₃ and Sb₂Te₃ thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi₂Te₃ and 500-µm-thick Sb₂Te₃ films are obtained. The Seebeck coefficients for the Bi₂Te₃ and Sb₂Te₃ films are -150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi₂Te₃ is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb₂Te₃. The power factors of each thermoelectric material can reach 15 × 10-4 W/mK² for Bi₂Te₃ and 11.2 × 10-4 W/mK² for Sb₂Te₃.
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Project description:Due to the intrinsic contradiction of electrical conductivity and Seebeck coefficient in thermoelectric materials, the enhancement for the power factor (PF) is limited. Since the PF decides the output power, strategies to the enhancement of PF are of paramount importance. In this work, Bi2 Te3 /Sb and Bi2 Te3 /W multilayer films are proposed to enhance the thermoelectric properties. Both systems possess extremely high conductivity of ≈5.6 × 105 S m-1 . Moreover, the electrical conductivity and Seebeck coefficient simultaneously increase as temperature rising, showing the overcome of the intrinsic contradiction. This results in ultrahigh PFs of 1785 µWm-1 K-2 for Bi2 Te3 /W and of 1566 µWm-1 K-2 for Bi2 Te3 /Sb at 600 K. Thermal heating of the Bi2 Te3 /Sb multilayer system shows compositional changes with subsequent formation of Bi-Te-Sb phases, Sb-rich Bi-Te precipitates, and cavities. Contrary, the multilayer structure of the Bi2 Te3 /W films is maintained, while Bi2 Te3 grains of high-crystalline quality are confined between the W layers. In addition, bilayer defects in Bi2 Te3 and smaller cavities at the interface to W layers are also observed. Thus, compositional and confinement effects as well as structural defects result in the ultrahigh PF. Overall, this work demonstrates the strategies on how to obtain ultrahigh PFs of commercial Bi2 Te3 material by microstructure engineering using multilayer structures.
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Project description:Bi2Te3-based compounds are exclusive commercial thermoelectric materials around room temperature. For n-type compounds, optimal thermoelectric properties are normally obtained at temperatures higher than room temperature to suppress the bipolar effect through increased carrier concentration. We find that doping with trace amounts of Cd and the addition of excess Bi are effective ways to optimize carrier concentration and achieve enhanced room-temperature thermoelectric performance for the Bi2Te2.7Se0.3 alloy in this work. For the Cd-doped samples, the replacement of Cd with Bi leads to not only a significant decrease in electron concentration but also apparently reduces the total thermal conductivity. The addition of excess Bi in the samples creates a Bi-rich synthetic atmosphere during the synthesis process, leading to increased BiTe antisite defects, decreased electron concentration, and reduced total thermal conductivity. Doping a small amount of Cd or adding excess Bi causes optimal thermoelectric performance of the n-type Bi2Te2.7Se0.3 sample shifts obviously toward low temperatures, and the samples with 0.4 atom % Cd and 0.8 atom % excess Bi achieve maximum zT of ∼0.97 at 448 K and ∼0.88 at 348 K, respectively.
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Project description:Dual-parameter pressure-temperature sensors are widely employed in personal health monitoring and robots to detect external signals. Herein, we develop a flexible composite dual-parameter pressure-temperature sensor based on three-dimensional (3D) spiral thermoelectric Bi2Te3 films. The film has a (000l) texture and good flexibility, exhibiting a maximum Seebeck coefficient of -181 μV K-1 and piezoresistance gauge factor of approximately -9.2. The device demonstrates a record-high temperature-sensing performance with a high sensing sensitivity (-426.4 μV K-1) and rapid response time (~0.95 s), which are better than those observed in most previous studies. In addition, owing to the piezoresistive effect in the Bi2Te3 film, the 3D-spiral deviceexhibits significant pressure-response properties with a pressure-sensing sensitivity of 120 Pa-1. This innovative approach achieves high-performance dual-parameter sensing using one kind of material with high flexibility, providing insight into the design and fabrication of many applications, such as e-skin.
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Project description:The present study reports an enhancement of the power factor of Bi2Te3 nanorods NRs) by helium (He+) ion irradiation. High-resolution transmission electron microscopy studies revealed the formation of amorphous layers on the surface of the NRs at the high ion fluence. This amorphous nature is due to the accumulation of migrating point defect clusters at the surface of the NRs. Raman scattering experiments provide further insight to the observed structural modifications. At higher ion fluence, impurity-dominated scattering processes significantly enhance the value of the Seebeck coefficient of Bi2Te3 NRs. The He+ ion irradiation up to the ion fluence of 1 × 1016 ions/cm2 improves the thermoelectric transport properties with the highest power factor, 8.2 μW/m K2, at 390 K. Further investigations may result in the possibility of fabricating the Bi2Te3 NRs as thermoelectric generators with a high power factor for space applications.
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