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Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

ABSTRACT: Multilayered heterostructures comprising of In₂ O₃ , SnO₂ , and Al₂ O₃ were studied for their application in thin-film transistors (TFT). The compositional influence of tin oxide on the properties of the thin-film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200 °C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post-deposition annealing at 400 °C the thin-films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al₂ O₃ in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In₂ O₃ /SnO₂ /Al₂ O₃ are incorporated into TFT devices, exhibiting a saturation field-effect mobility (μ_sat ) of 2.0 cm² ⋅ V^-1 s^-1 , a threshold-voltage (V_th ) of 8.6 V, a high current on/off ratio (I_On /I_Off ) of 1.0×10⁷ , and a subthreshold swing (SS) of 485 mV ⋅ dec^-1 . The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm).

SUBMITTER: Buschges MI

PROVIDER: S-EPMC8362207 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Project description:Fabrication and organosilane-functionalization and characterization of nanostructured ITO electrodes are reported. Nanostructured ITO electrodes were obtained by electron beam evaporation, and a subsequent annealing treatment was selectively performed to modify their crystalline state. An increase in geometrical surface area in comparison with thin-film electrodes area was observed by atomic force microscopy, implying higher electroactive surface area for nanostructured ITO electrodes and thus higher detection levels. To investigate the increase in detectability, chemical organosilane-functionalization of nanostructured ITO electrodes was performed. The formation of 3-glycidoxypropyltrimethoxysilane (GOPTS) layers was detected by X-ray photoelectron spectroscopy. As an indirect method to confirm the presence of organosilane molecules on the ITO substrates, cyclic voltammetry and electrochemical impedance spectroscopy (EIS) were also carried out. Cyclic voltammograms of functionalized ITO electrodes presented lower reduction-oxidation peak currents compared with non-functionalized ITO electrodes. These results demonstrate the presence of the epoxysilane coating on the ITO surface. EIS showed that organosilane-functionalized electrodes present higher polarization resistance, acting as an electronic barrier for the electron transfer between the conductive solution and the ITO electrode. The results of these electrochemical measurements, together with the significant difference in the X-ray spectra between bare ITO and organosilane-functionalized ITO substrates, may point to a new exploitable oxide-based nanostructured material for biosensing applications. As a first step towards sensing, rapid functionalization of such substrates and their application to electrochemical analysis is tested in this work. Interestingly, oxide-based materials are highly integrable with the silicon chip technology, which would permit the easy adaptation of such sensors into lab-on-a-chip configurations, providing benefits such as reduced size and weight to facilitate on-chip integration, and leading to low-cost mass production of microanalysis systems.

Dataset Information

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

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