Ontology highlight
ABSTRACT:
SUBMITTER: Huang HW
PROVIDER: S-EPMC3879181 | biostudies-other | 2013 Nov
REPOSITORIES: biostudies-other
Huang Hsin-Wei HW Kang Chen-Fang CF Lai Fang-I FI He Jr-Hau JH Lin Su-Jien SJ Chueh Yu-Lun YL
Nanoscale research letters 20131116 1
We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O2 pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and ...[more]