Dataset Information

Photoresponsive and gas sensing field-effect transistors based on multilayer WS? nanoflakes.

ABSTRACT: The photoelectrical properties of multilayer WS? nanoflakes including field-effect, photosensitive and gas sensing are comprehensively and systematically studied. The transistors perform an n-type behavior with electron mobility of 12 cm(2)/Vs and exhibit high photosensitive characteristics with response time (?) of <20 ms, photo-responsivity (R?) of 5.7 A/W and external quantum efficiency (EQE) of 1118%. In addition, charge transfer can appear between the multilayer WS? nanoflakes and the physical-adsorbed gas molecules, greatly influencing the photoelectrical properties of our devices. The ethanol and NH? molecules can serve as electron donors to enhance the R? and EQE significantly. Under the NH3 atmosphere, the maximum R? and EQE can even reach 884 A/W and 1.7 × 10(5)%, respectively. This work demonstrates that multilayer WS? nanoflakes possess important potential for applications in field-effect transistors, highly sensitive photodetectors, and gas sensors, and it will open new way to develop two-dimensional (2D) WS?-based optoelectronics.

SUBMITTER: Huo N

PROVIDER: S-EPMC4048886 | biostudies-other | 2014

REPOSITORIES: biostudies-other

ACCESS DATA

Publications

Photoresponsive and gas sensing field-effect transistors based on multilayer WS₂ nanoflakes.

Huo Nengjie N Yang Shengxue S Wei Zhongming Z Li Shu-Shen SS Xia Jian-Bai JB Li Jingbo J

Scientific reports 20140609

The photoelectrical properties of multilayer WS₂ nanoflakes including field-effect, photosensitive and gas sensing are comprehensively and systematically studied. The transistors perform an n-type behavior with electron mobility of 12 cm(2)/Vs and exhibit high photosensitive characteristics with response time (τ) of <20 ms, photo-responsivity (Rλ) of 5.7 A/W and external quantum efficiency (EQE) of 1118%. In addition, charge transfer can appear between the multilayer WS₂ nanoflakes and the physi ...[more]

PMID: 24909387

Similar Datasets

Project description:The key impact and significance of a multilayer polymer-based dielectric system on the remarkable photoresponse properties of zinc phthalocyanine (ZnPc)-based photosensitive organic field-effect transistors (PS-OFETs) have been systematically analyzed at various incident optical powers. A combination of inorganic aluminum oxide (Al2O3) and organic nonpolar poly(methyl methacrylate) (PMMA) is used as the bilayer dielectric configuration, whereas in the trilayer dielectric system, a bilayer polymer dielectric, consisting of PMMA, as the low-k dielectric polymer, on top of poly(vinyl alcohol) (PVA), the high-k polar dielectric, has been fabricated along with Al2O3 as the third layer. Before fabricating the OFETs, a systematic optimization of the nature of growth of the ZnPc molecules, deposited on PMMA-coated glass substrates at different substrate temperatures (T s) was performed and examined by atomic-force microscopy, field-emission scanning electron microscopy, X-ray diffraction, and Raman analysis. At 90 °C, the fabricated PS-OFETs with the Al2O3/PVA/PMMA trilayer dielectric configuration showed the best p-channel behavior, with an enhanced and remarkable photoresponsivity of R ∼ 9689.39 A W-1 compared to that of the Al2O3/PMMA bilayer dielectric system (R ∼ 2679.40 A W-1) due to the polarization of the dipoles inside the polar PVA dielectric, which increases the charge transport through the channel. The charge carrier mobility of the device also improved by one order (μh ∼ 1.3 × 10-2 cm2 V-1 s-1) compared to that of the bilayer dielectric configuration (μh ∼ 3.5 × 10-3 cm2 V-1 s-1). The observed specific detectivity (D*) and NEP values of the bilayer dielectric system were 6.01 × 1013 Jones and 2.655 × 10-17 W Hz-1/2, whereas for the trilayer dielectric system, the observed D* and NEP values were 5.13 × 1014 Jones and 1.043 × 10-17 W Hz-1/2, respectively. Additionally, the operating voltage of each of the fabricated devices was also very low (-10 V) due to the influence of the inorganic high-k Al2O3 dielectric layer. The electrical stability of all of the fabricated devices was also investigated by bias stress analysis under both light and dark conditions in vacuum. To the best of our knowledge, the photoresponsivity (R) reported here with an Al2O3/PVA/PMMA trilayer dielectric configuration is the highest reported value for thin film-based PS-OFETs, at a remarkably low operating voltage of -10 V, on low-cost glass substrates without indium tin oxide or/and Si/SiO2.

Dataset Information

Photoresponsive and gas sensing field-effect transistors based on multilayer WS? nanoflakes.

Publications

Photoresponsive and gas sensing field-effect transistors based on multilayer WS₂ nanoflakes.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets