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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact.

ABSTRACT: Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.

SUBMITTER: Baines Y

PROVIDER: S-EPMC5557989 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature

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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact.

Baines Yannick Y Buckley Julien J Biscarrat Jérôme J Garnier Gennie G Charles Matthew M Vandendaele William W Gillot Charlotte C Plissonnier Marc M

Scientific reports 20170815 1

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular ...[more]

PMID: 28811615

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