Ontology highlight
ABSTRACT:
SUBMITTER: Growden TA
PROVIDER: S-EPMC6060061 | biostudies-literature | 2018
REPOSITORIES: biostudies-literature
Growden Tyler A TA Zhang Weidong W Brown Elliott R ER Storm David F DF Meyer David J DJ Berger Paul R PR
Light, science & applications 20180223
Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diodes at room temperature. Three different designs were grown on semi-insulating bulk GaN substrates using molecular beam epitaxy (MBE). All samples displayed a single electroluminescent spectral peak at 360 nm with full-width at half-maximum (FWHM) values no greater than 16 nm and an external quantum efficiency (EQE) of ≈0.0074% at 18.8 mA. In contrast to traditional GaN light emitters, p-type doping ...[more]