Ontology highlight
ABSTRACT:
SUBMITTER: Greco G
PROVIDER: S-EPMC3211179 | biostudies-literature | 2011 Feb
REPOSITORIES: biostudies-literature
Nanoscale research letters 20110211 1
The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electron microscopy, atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM). In particular, a CHF3-based plasma process in the gate region resulted in a shift of the threshold voltage i ...[more]