Ontology highlight
ABSTRACT:
SUBMITTER: Reshchikov MA
PROVIDER: S-EPMC7010669 | biostudies-literature | 2020 Feb
REPOSITORIES: biostudies-literature
Scientific reports 20200210 1
Photoluminescence (PL) was used to estimate the concentration of carbon in GaN grown by hydride vapor phase epitaxy (HVPE). The PL data were compared with profiles of the impurities obtained from secondary ion mass spectrometry (SIMS) measurements. Comparison of PL and SIMS data has revealed that apparently high concentrations of C and O at depths up to 1 µm in SIMS profiles do not represent depth distributions of these species in the GaN matrix but are rather caused by post-growth surface conta ...[more]